Application of piezoelectric composites and net‐shape PZT ceramics as acoustic sensors and actuators

1997 ◽  
Vol 101 (5) ◽  
pp. 3094-3094 ◽  
Author(s):  
C. Near ◽  
R. Gentilman ◽  
B. Pazol ◽  
D. Fiore ◽  
W. Serwatka ◽  
...  
Keyword(s):  
Acoustic Sensors ◽  
Sensors And Actuators ◽  
Piezoelectric Composites ◽  
Pzt Ceramics

Convergent-bceam diffraction studies on lead zirconate titanate Ceramics

1986 ◽  
Vol 44 ◽  
pp. 482-483
Author(s):  
M.L.A. Dass ◽  
T.A. Bielicki ◽  
G. Thomas ◽  
T. Yamamoto ◽  
K. Okazaki
Keyword(s):  
Lead Zirconate Titanate ◽  
Direct Proof ◽  
Lead Zirconate ◽  
Subsolidus Phase ◽  
Pzt Ceramics ◽  
Subsolidus Phase Diagram ◽  
Zirconate Titanate ◽  
Two Phases ◽  
Cbd Method ◽  
Titanate Ceramics

Lead zirconate titanate, Pb(Zr,Ti)O3 (PZT), ceramics are ferroelectrics formed as solid solutions between ferroelectric PbTiO3 and ant iferroelectric PbZrO3. The subsolidus phase diagram is shown in figure 1. PZT transforms between the Ti-rich tetragonal (T) and the Zr-rich rhombohedral (R) phases at a composition which is nearly independent of temperature. This phenomenon is called morphotropism, and the boundary between the two phases is known as the morphotropic phase boundary (MPB). The excellent piezoelectric and dielectric properties occurring at this composition are believed to.be due to the coexistence of T and R phases, which results in easy poling (i.e. orientation of individual grain polarizations in the direction of an applied electric field). However, there is little direct proof of the coexistence of the two phases at the MPB, possibly because of the difficulty of distinguishing between them. In this investigation a CBD method was found which would successfully differentiate between the phases, and this was applied to confirm the coexistence of the two phases.

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

Multimode acoustic sensors and systems

2005 ◽  
Vol 175 (8) ◽  
pp. 900 ◽  
Author(s):  
I.V. Anisimkin ◽  
Vladimir I. Anisimkin
Keyword(s):  
Acoustic Sensors
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