Effect of signal frequency and masker level on the frequency regions responsible for the overshoot effect

1992 ◽  
Vol 91 (2) ◽  
pp. 1034-1041 ◽  
Author(s):  
Robert P. Carlyon ◽  
Louise J. White
Keyword(s):  
Signal Frequency ◽  
Masker Level

Masking by modulated and unmodulated noise: Effects of bandwidth, modulation rate, signal frequency, and masker level

1997 ◽  
Vol 101 (3) ◽  
pp. 1600-1610 ◽  
Author(s):  
Sid P. Bacon ◽  
Jungmee Lee ◽  
Daniel N. Peterson ◽  
Dawne Rainey
Keyword(s):  
Signal Frequency ◽  
Noise Effects ◽  
Masker Level ◽  
Modulation Rate

Influence of Frequency Selectivity on Comodulation Masking Release in Normal-Hearing Listeners

1993 ◽  
Vol 36 (2) ◽  
pp. 410-423 ◽  
Author(s):  
Joseph W. Hall ◽  
John H. Grose ◽  
Brian C. J. Moore
Keyword(s):  
Normal Hearing ◽  
Frequency Selectivity ◽  
Frequency Separation ◽  
Signal Frequency ◽  
Noise Background ◽  
Masker Level ◽  
Reduced Frequency ◽  
Comodulation Masking Release ◽  
Comodulated Noise ◽  
Signal Band

Experiments 1 and 2 investigated the effect of frequency selectivity on comodulation masking release (CMR) in normal-hearing subjects, examining conditions where frequency selectivity was relatively good (low masker level at both low [500-Hz] and high [2500-Hz] signal frequency, and high masker level at low signal frequency) and where frequency selectivity was somewhat degraded (high masker level and high signal frequency). The first experiment investigated CMR in conditions where a narrow modulated noise band was centered on the signal frequency, and a wider comodulated noise band was located below the band centered on the signal frequency. Signal frequencies were 500 and 2000 Hz. The masker level and the frequency separation between the on-signal and comodulated flanking band were varied. In addition to conditions where the flanking band and on-signal band were presented at the same spectrum level, conditions were included where the spectrum level of the flanking band was 10-dB higher than that of the on-signal band, in order to accentuate effects of reduced frequency selectivity. Results indicated that CMR was reduced at the 2000-Hz region when masker level was high, when the frequency separation between on-signal and flanking band was small, and when a 10-dB level disparity existed between the on-signal and flanking band. In the second experiment, CMR was investigated for narrow comodulated noise bands, presented either without any additional sound or in the presence of a random noise background. CMR increased slightly as the masker level increased, except at 2500 Hz when the noise background was present. The decrease in CMR at 2500 Hz with the high masker level and with a noise background present could be explained in terms of reduced frequency selectivity. In a third experiment, we compared performance for equal absolute bandwidth maskers at a low (500-Hz) and a high (2000-Hz) stimulus frequency. Results here suggested that detection in modulated noise may be reduced due to a reduction in the number of quasi-independent auditory filters contributing temporal envelope information. The effects found in the present study using normal-hearing listeners under conditions of degraded frequency selectivity may be useful in understanding part of the reduction of CMR that occurs in cochlear-impaired listeners having reduced frequency selectivity.

Detection of a tone burst in continuous‐ and gated‐noise maskers; defects of signal frequency, duration, and masker level

1977 ◽  
Vol 61 (5) ◽  
pp. 1298-1300 ◽  
Author(s):  
Craig C. Wier ◽  
David M. Green ◽  
Ervin R. Hafter ◽  
S. Burkhardt
Keyword(s):  
Tone Burst ◽  
Signal Frequency ◽  
Masker Level ◽  
Gated Noise

Test Circuit Conditioning for Soft Defect Localization

2014 ◽  
Author(s):  
Kristopher D. Staller ◽  
Corey Goodrich
Keyword(s):  
Laser Beam ◽  
Failure Analysis ◽  
Signal Frequency ◽  
Dynamic Failure ◽  
The Third ◽  
Analysis Technique ◽  
Test Circuit ◽  
Defect Localization ◽  
Manual Input ◽  
Fast Dynamic

Abstract Soft Defect Localization (SDL) is a dynamic laser-based failure analysis technique that can detect circuit upsets (or cause a malfunctioning circuit to recover) by generation of localized heat or photons from a rastered laser beam. SDL is the third and seldom used method on the LSM tool. Most failure analysis LSM sessions use the endo-thermic mode (TIVA, XIVA, OBIRCH), followed by the photo-injection mode (LIVA) to isolate most of their failures. SDL is seldom used or attempted, unless there is a unique and obvious failure mode that can benefit from the application. Many failure analysts, with a creative approach to the analysis, can employ SDL. They will benefit by rapidly finding the location of the failure mechanism and forgoing weeks of nodal probing and isolation. This paper will cover circuit signal conditioning to allow for fast dynamic failure isolation using an LSM for laser stimulation. Discussions of several cases will demonstrate how the laser can be employed for triggering across a pass/fail boundary as defined by voltage levels, supply currents, signal frequency, or digital flags. A technique for manual input of the LSM trigger is also discussed.

Energy Absorption in Dielectric–Dispersed Conductor Compositions versus Signal Frequency

2020 ◽  
Vol 65 (6) ◽  
pp. 935-937
Author(s):  
V. A. Sotskov ◽  
O. G. Ashkhotov ◽  
T. T. Magkoev
Keyword(s):  
Energy Absorption ◽  
Signal Frequency
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