Method of manufacturing potassium niobate single crystal thin film, surface acoustic wave element, frequency filter, frequency oscillator, electronic circuit, and electronic apparatus

2008 ◽  
Vol 123 (1) ◽  
pp. 13
Author(s):  
Takamitsu Higuchi
Keyword(s):  
Thin Film ◽  
Electronic Circuit ◽  
Film Surface ◽  
Potassium Niobate ◽  
Frequency Filter ◽  
Electronic Apparatus ◽  
Thin Film Surface ◽  
Frequency Oscillator ◽  
Wave Element ◽  
Filter Frequency

Stoichiometric composition of thin-film surface structures and its influence on the functional characteristics as regards gyroscopic devices

2020 ◽  
pp. 78-90
Author(s):  
M. A. Tit ◽  
S. N. Belyaev
Keyword(s):  
Thin Film ◽  
Titanium Nitride ◽  
Niobium Carbide ◽  
Structural Phase ◽  
Stoichiometric Composition ◽  
Film Surface ◽  
Surface Structures ◽  
Functional Surface ◽  
Base Surface ◽  
Thin Film Surface

This article considers the research results of the effect of stoichiometry on the properties of titanium nitride thin-film coatings of the float and electrostatic gyroscopes. It presents the results of tests of such mechanical and optical characteristics of titanium nitride thin-film structures as microhardness, resistance to wear and friction, and image contrast determined by the reflection coefficients of a titanium nitride base surface and a raster pattern formed by local laser oxidation. When making a rotor of a cryogenic gyroscope, the prospects of use and technological methods for the formation of functional surface structures of niobium carbide and nitride are considered. It is shown that during the formation of coatings of the required composition, the most important is the thermodynamic estimation of possible interactions. These interactions allow us to accomplish the structural-phase modification of the material, which is determined by the complex of possible topochemical reactions leading to the formation of compounds, including non-stoichiometric composition.

Microarray of neuroblastoma cells on the selectively functionalized nanocrystalline diamond thin film surface

2016 ◽  
Vol 361 ◽  
pp. 269-276 ◽  
Author(s):  
Young-Sang Park ◽  
Hyeong-Guk Son ◽  
Dae-Hoon Kim ◽  
Hong-Gi Oh ◽  
Da-Som Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Neuroblastoma Cells ◽  
Film Surface ◽  
Nanocrystalline Diamond ◽  
Thin Film Surface ◽  
Diamond Thin Film

Thin Film Surface Resistance Measurements For Superconducting Cavity Applications

1991 ◽  
pp. 155-160
Author(s):  
A. Andreone ◽  
C. Attanasio ◽  
A. Di Chiara ◽  
L. Maritato ◽  
A. Nigro ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Resistance ◽  
Film Surface ◽  
Superconducting Cavity ◽  
Thin Film Surface

scholarly journals SYNTHESIS OF THIN FILM OF TiO2 ON GRAPHITE SUBSTRATE BY CHEMICAL BATH DEPOSITION

2010 ◽  
Vol 6 (2) ◽  
pp. 121-126 ◽  
Author(s):  
Fitria Rahmawati ◽  
Sayekti Wahyuningsih ◽  
Pamularsih A.W
Keyword(s):  
Thin Film ◽  
Chemical Bath Deposition ◽  
Surfactant Concentration ◽  
High Efficiency ◽  
Anatase Phase ◽  
Film Surface ◽  
Optical Microscope ◽  
Graphite Substrate ◽  
Thin Film Surface ◽  
Photon Conversion

Thin film of TiO2 on graphite substrat has been prepared by means of chemical bath deposition. Cetyltrimethylammonium Bromide served  as linking agent of synthesized TiO2 to graphite substrate.The optical microscope and Scanning Electron Microscope (SEM) indicate that surfactant concentration affects the pore morphology of thin film Surface Area Analysis (SAA) of thin film indicated that the pore of thin film included in mesopore category. The anatase phase of TiO2 quantity arised as the surfactant concentration increase, gave high efficiency of induced photon conversion to current efficiency (% IPCE).   Keywords: thin film, TiO2, deposition, graphite

scholarly journals Positioning of the Precursor Gas Inlet in an Atmospheric Dielectric Barrier Reactor, and its Effect on the Quality of Deposited TiOx Thin Film Surface

10.14311/1767 ◽  
2013 ◽  
Vol 53 (2) ◽  
Author(s):  
Jan Píchal ◽  
Julia Klenko
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Barrier Discharge ◽  
Atmospheric Pressure ◽  
Barrier Discharge ◽  
Film Surface ◽  
Dielectric Barrier ◽  
Thin Film Surface ◽  
Atmospheric Dielectric Barrier Discharge

Thin film technology has become pervasive in many applications in recent years, but it remains difficult to select the best deposition technique. A further consideration is that, due to ecological demands, we are forced to search for environmentally benign methods. One such method might be the application of cold plasmas, and there has already been a rapid growth in studies of cold plasma techniques. Plasma technologies operating at atmospheric pressure have been attracting increasing attention. The easiest way to obtain low temperature plasma at atmospheric pressure seems to be through atmospheric dielectric barrier discharge (ADBD). We used the plasma enhanced chemical vapour deposition (PECVD) method applying atmospheric dielectric barrier discharge (ADBD) plasmafor TiOx thin films deposition, employing titanium isopropoxide (TTIP) and oxygen as reactants, and argon as a working gas. ADBD was operated in filamentary mode. The films were deposited on glass. We studied the quality of the deposited TiOx thin film surface for various precursor gas inlet positions in the ADBD reactor. The best thin films quality was achieved when the precursor gases were brought close to the substrate surface directly through the inlet placed in one of the electrodes.High hydrophilicity of the samples was proved by contact angle tests (CA). The film morphology was tested by atomic force microscopy (AFM). The thickness of the thin films varied in the range of (80 ÷ 210) nm in dependence on the composition of the reactor atmosphere. XPS analyses indicate that composition of the films is more like the composition of TiOxCy.

Covalent immobilization of DNA and hybridization on microchips by microsecond electric field pulses

2004 ◽  
Vol 820 ◽  
Author(s):  
F. Fixe ◽  
H.M. Branz ◽  
D.M.F. Prazeres ◽  
V. Chu ◽  
J.P. Conde
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Film Surface ◽  
Covalent Immobilization ◽  
Plastic Substrate ◽  
Field Pulse ◽  
Thin Film Surface ◽  
Large Size ◽  
Electrode Voltage ◽  
Film Area

AbstractSingle square voltage pulses were used to enhance by 7 and 9 orders of magnitude the rate of covalent immobilization and hybridization, respectively, of single stranded DNA probes on a chemically functionalized thin film surface (silicon dioxide) using 2 mm size electrodes. These electrodes were scaled down to 20 μm. Photolithography was used to define the electrode voltage line, ground line, and functionalized thin-film area on a plastic substrate (polyimide). At all electrode dimensions, electric field-assisted DNA immobilization and hybridization can be achieved in the microsecond time scale, far faster than the 2 hr or 16 hr needed for immobilization and hybridization, respectively, without the electric field. Pulse conditions optimized with the large-size electrodes (2 mm) were used in the microelectrodes.

Effect of argon and substrate bias on diamond thin film surface morphology

Vacuum ◽  
2007 ◽  
Vol 82 (2) ◽  
pp. 154-157 ◽  
Author(s):  
M. Marton ◽  
T. Ižák ◽  
M. Veselý ◽  
M. Vojs ◽  
M. Michalka ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Film Surface ◽  
Substrate Bias ◽  
Thin Film Surface ◽  
Diamond Thin Film
Sign in / Sign up

Export Citation Format

Share Document