BOOK AND FILM REVIEWS: Introduction to Semiconductor Physics

1966 ◽  
Vol 4 (2) ◽  
pp. 93-93
Author(s):  
R. B. Adler ◽  
A. C. Smith ◽  
R. L. Longini ◽  
R. E. Alley
1994 ◽  
Vol 7 (2) ◽  
pp. 167-170
Author(s):  
Suzette Heald ◽  
Rita Astuti
Keyword(s):  

2003 ◽  
Vol 770 ◽  
Author(s):  
N.Q. Vinh ◽  
T. Gregorkiewicz

AbstractOne of the open questions in semiconductor physics is the origin of the small splittings of the excited states of bound excitons in silicon. A free electron laser as a tunable source of the mid-infrared radiation (MIR) can be used to investigate such splittings of the excited states of optical centers created by transition metal dopants in silicon. In the current study, the photoluminescence from silver and copper doped silicon is investigated by two color spectroscopy in the visible and the MIR. It is shown the PL due recombination of exciton bound to Ag and Cu is quenched upon application of the MIR beam. The time-resolved photoluminescence measurements and the quenching effects of these bands are presented. By scanning the wavelength of the free-electron laser ionization spectra of relevant traps involved in photoluminescence are obtained. The formation and dissociation of the bound excitons, and the small splittings of the effective-mass excited states are discussed. The applied experimental method allows correlation of DLTS data on trapping centers to specific channels of radiative recombination. It can be applied for spectroscopic analysis in materials science of semicondutors.


2010 ◽  
Vol 8 (1) ◽  
pp. 90-91
Author(s):  
Paul Buhle
Keyword(s):  

1967 ◽  
Vol 13 (11) ◽  
pp. 429
Author(s):  
J.E.L. Hollis

1970 ◽  
Vol 4 (4) ◽  
pp. 311-312
Author(s):  
John B. Jepson ◽  
S. M. Finch ◽  
B. Gregson-Allcott
Keyword(s):  

1976 ◽  
Vol 7 (2) ◽  
pp. 255-256
Author(s):  
Ronald Gallimore
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document