A scintillating fiber beam-energy monitor for electron beam therapy

1995 ◽  
Vol 22 (12) ◽  
pp. 2101-2102 ◽  
Author(s):  
Takahiko Aoyama ◽  
Hisashi Maekoshi ◽  
Masatoshi Tsuzaka ◽  
Shuji Koyama
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Electron Beam Therapy ◽  
Scintillating Fiber

A depth-dose measuring device using a multichannel scintillating fiber array for electron beam therapy

1997 ◽  
Vol 24 (8) ◽  
pp. 1235-1239 ◽  
Author(s):  
Takahiko Aoyama ◽  
Shuji Koyama ◽  
Masatoshi Tsuzaka ◽  
Hisashi Maekoshi
Keyword(s):  
Electron Beam ◽  
Fiber Array ◽  
Measuring Device ◽  
Electron Beam Therapy ◽  
Depth Dose ◽  
Scintillating Fiber

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

Surface recombination effects on minority carrier diffusion length measurements using electron beam-induced current

1990 ◽  
Vol 48 (4) ◽  
pp. 744-745
Author(s):  
D.P. Malta ◽  
M.L. Timmons
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Effective Diffusion ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Logarithmic Scale ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

Measurement of the minority carrier diffusion length (L) can be performed by measurement of the rate of decay of excess minority carriers with the distance (x) of an electron beam excitation source from a p-n junction or Schottky barrier junction perpendicular to the surface in an SEM. In an ideal case, the decay is exponential according to the equation, I = Ioexp(−x/L), where I is the current measured at x and Io is the maximum current measured at x=0. L can be obtained from the slope of the straight line when plotted on a semi-logarithmic scale. In reality, carriers recombine not only in the bulk but at the surface as well. The result is a non-exponential decay or a sublinear semi-logarithmic plot. The effective diffusion length (Leff) measured is shorter than the actual value. Some improvement in accuracy can be obtained by increasing the beam-energy, thereby increasing the penetration depth and reducing the percentage of carriers reaching the surface. For materials known to have a high surface recombination velocity s (cm/sec) such as GaAs and its alloys, increasing the beam energy is insufficient. Furthermore, one may find an upper limit on beam energy as the diameter of the signal generation volume approaches the device dimensions.

ELECTRON BEAM ENERGY BRANCHING IN OXYGEN

1979 ◽  
Vol 40 (C7) ◽  
pp. C7-777-C7-778
Author(s):  
G. Fournier ◽  
J. Bonnet ◽  
J. Bridet ◽  
J. Fort ◽  
D. Pigache
Keyword(s):  
Electron Beam ◽  
Beam Energy ◽  
Electron Beam Energy

A Case of a Caucasian with Basal Cell Carcinoma Who was Successfully Treated by Electron Beam Therapy

2018 ◽  
Vol 80 (4) ◽  
pp. 340-344
Author(s):  
Tomomi IMAMURA ◽  
Monji KOGA ◽  
Yoshitsugu SHIBAYAMA ◽  
Shinichi IMAFUKU
Keyword(s):  
Electron Beam ◽  
Basal Cell Carcinoma ◽  
Cell Carcinoma ◽  
Basal Cell ◽  
Electron Beam Therapy

HIGH SPEED ELECTRON BEAM THERAPY

1967 ◽  
Vol 99 (4) ◽  
pp. 932-938 ◽  
Author(s):  
A. ZUPPINGER
Keyword(s):  
Electron Beam ◽  
High Speed ◽  
Electron Beam Therapy

scholarly journals Primary Cutaneous Epidermotropic Marginal Zone B-Cell Lymphoma Treated with Total Skin Electron Beam Therapy

2021 ◽  
Author(s):  
Blake W. Boudreaux ◽  
Meera H. Patel ◽  
Caitlin M. Brumfiel ◽  
Jake Besch-Stokes ◽  
David J. DiCaudo ◽  
...  
Keyword(s):  
Electron Beam ◽  
B Cell ◽  
Marginal Zone ◽  
Cell Lymphoma ◽  
B Cell Lymphoma ◽  
Electron Beam Therapy
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