A fast low-noise line scan x-ray detector

1989 ◽  
Vol 16 (1) ◽  
pp. 98-104 ◽  
Author(s):  
Claus-C. Glüer ◽  
Wolf-R. Dix ◽  
Klaus Engelke ◽  
Walter Graeff ◽  
Wolfram Kupper ◽  
...  
Keyword(s):  
Low Noise ◽  
X Ray ◽  
Line Scan

Arsenic segregation in polysilicon

1983 ◽  
Vol 41 ◽  
pp. 154-155 ◽  
Author(s):  
P.E. Batson ◽  
C.R.M. Grovenor ◽  
D.A. Smith ◽  
C. Wong
Keyword(s):  
Incident Beam ◽  
Silicon Wafers ◽  
Chemical Polishing ◽  
Bright Field Image ◽  
Beam Size ◽  
Stem Analysis ◽  
Bright Field ◽  
Twin Boundaries ◽  
X Ray ◽  
Line Scan

In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing. The microstructure, which is unchanged by the final 700°C anneal,is shown in Figure 1. It consists of numerous randomly oriented grains many of which contain twins.X-ray analysis was carried out in a VG HB5 STEM. As K α x-ray counts were collected from STEM scans across grain and twin boundaries, Figures 2-4. The incident beam size was about 1.5nm in diameter, and each of the 20 channels in the plots was sampled from a 1.6nm length of the approximately 30nm line scan across the boundary. The bright field image profile along the scanned line was monitored during the analysis to allow correlation between the image and the x-ray signal.

X-ray Compton line scan tomography*

2015 ◽  
Vol 57 (11-12) ◽  
pp. 985-991
Author(s):  
Andreas Kupsch ◽  
Axel Lange ◽  
Manfred P. Hentschel ◽  
Gerd-Rüdiger Jaenisch ◽  
Nikolay Kardjilov ◽  
...  
Keyword(s):  
X Ray ◽  
Line Scan

scholarly journals Characterization of Chromium Compensated GaAs Sensors with the Charge-Integrating JUNGFRAU Readout Chip by Means of a Highly Collimated Pencil Beam

Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1550
Author(s):  
Dominic Greiffenberg ◽  
Marie Andrä ◽  
Rebecca Barten ◽  
Anna Bergamaschi ◽  
Martin Brückner ◽  
...  
Keyword(s):  
Low Noise ◽  
State University ◽  
Noise Performance ◽  
X Ray ◽  
A Value ◽  
Resolution Capability ◽  
Sensor Properties ◽  
Pixel Pitch ◽  
Lower Noise

Chromium compensated GaAs or GaAs:Cr sensors provided by the Tomsk State University (Russia) were characterized using the low noise, charge integrating readout chip JUNGFRAU with a pixel pitch of 75 × 75 µm2 regarding its application as an X-ray detector at synchrotrons sources or FELs. Sensor properties such as dark current, resistivity, noise performance, spectral resolution capability and charge transport properties were measured and compared with results from a previous batch of GaAs:Cr sensors which were produced from wafers obtained from a different supplier. The properties of the sample from the later batch of sensors from 2017 show a resistivity of 1.69 × 109 Ω/cm, which is 47% higher compared to the previous batch from 2016. Moreover, its noise performance is 14% lower with a value of (101.65 ± 0.04) e− ENC and the resolution of a monochromatic 60 keV photo peak is significantly improved by 38% to a FWHM of 4.3%. Likely, this is due to improvements in charge collection, lower noise, and more homogeneous effective pixel size. In a previous work, a hole lifetime of 1.4 ns for GaAs:Cr sensors was determined for the sensors of the 2016 sensor batch, explaining the so-called “crater effect” which describes the occurrence of negative signals in the pixels around a pixel with a photon hit due to the missing hole contribution to the overall signal causing an incomplete signal induction. In this publication, the “crater effect” is further elaborated by measuring GaAs:Cr sensors using the sensors from 2017. The hole lifetime of these sensors was 2.5 ns. A focused photon beam was used to illuminate well defined positions along the pixels in order to corroborate the findings from the previous work and to further characterize the consequences of the “crater effect” on the detector operation.

Design of a Multi-Channel Low-Noise Readout ASIC for CdZnTe-Based X-Ray and $\gamma $-Ray Spectrum Analyzer

2015 ◽  
Vol 62 (5) ◽  
pp. 1995-2002 ◽  
Author(s):  
B. Gan ◽  
T. Wei ◽  
W. Gao ◽  
R. Zheng ◽  
Y. Hu
Keyword(s):  
Low Noise ◽  
Spectrum Analyzer ◽  
X Ray

PD-HEXID1: A Low-Power, Low-Noise Pixel Readout ASIC for Pixelated-Scintillator-Based X-Ray Detectors

2018 ◽  
Author(s):  
Shaorui Li ◽  
Gianluigi De Geronimo ◽  
Gabriele Giacomini ◽  
Jack Fried ◽  
Donald A. Pinelli ◽  
...  
Keyword(s):  
Low Power ◽  
Low Noise ◽  
X Ray

Single photon imaging X-ray spectrometers using low noise current preamplifiers with dc voltage bias

1997 ◽  
Vol 7 (2) ◽  
pp. 3383-3386 ◽  
Author(s):  
S. Friedrich ◽  
K. Segall ◽  
M.C. Gaidis ◽  
C.M. Wilson ◽  
D.E. Prober ◽  
...  
Keyword(s):  
Single Photon ◽  
Low Noise ◽  
Dc Voltage ◽  
X Ray ◽  
Noise Current ◽  
Voltage Bias ◽  
Photon Imaging

Noise analysis of gallium arsenide pixel X-ray detectors coupled to ultra-low noise electronics

2003 ◽  
Vol 50 (3) ◽  
pp. 723-728 ◽  
Author(s):  
G. Bertuccio ◽  
R. Casiraghi ◽  
D. Maiocchi ◽  
A. Owens ◽  
M. Bavdaz ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Noise Analysis ◽  
Low Noise ◽  
X Ray ◽  
Ultra Low Noise
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