Electron Spin Resonance: A Comprehensive Treatise on Experimental Techniques by C. P. Poole, Jr.

1984 ◽  
Vol 11 (4) ◽  
pp. 568-569
Author(s):  
Harold M. Swartz
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Experimental Techniques ◽  
Spin Resonance ◽  
Comprehensive Treatise

Electron Spin Resonance Studies of Amorphous Silicon

1980 ◽  
Vol 3 ◽  
Author(s):  
David K. Biegelsen
Keyword(s):  
Electron Spin Resonance ◽  
Amorphous Silicon ◽  
Electron Spin ◽  
Amorphous Semiconductor ◽  
Experimental Techniques ◽  
Equilibrium Behavior ◽  
Spin Resonance ◽  
Recombination Processes ◽  
Simple Picture ◽  
Non Equilibrium

ABSTRACTElectron spin resonance and related spin dependent measurements have been used to make key contributions to the understanding of amorphous silicon, specifically as probes of the dominant states in the gap, recombination processes and doping. In this paper we give a cursory description of the techniques as they apply to this problem. We then review what has been learned in a-Si:H usually from coupled results of spin resonance and other complementary experimental techniques. The results lead us to a surprisingly simple picture of the equilibrium and non-equilibrium behavior of defects and carriers in this prototypical amorphous semiconductor.

PHYSICAL PROPERTIES OF GERMANIUM BASED ALLOYS

1990 ◽  
Vol 04 (04) ◽  
pp. 581-589 ◽  
Author(s):  
F. DEMICHELIS ◽  
C. F. PIRRI ◽  
E. TRESSO
Keyword(s):  
Electron Spin Resonance ◽  
Electrical Properties ◽  
Physical Properties ◽  
Density Of States ◽  
Electron Spin ◽  
Experimental Techniques ◽  
Optical And Electrical Properties ◽  
Carbon Incorporation ◽  
Spin Resonance ◽  
Photoacoustic Spectrometry

The purpose of this paper is to provide a consistent set of data for germanium based alloys using a number of different experimental techniques (optical and photoacoustic spectrometry, Electron Spin Resonance, conductivity and nuclear measurements) in order to know the consequences, both structural and electronic, of carbon incorporation into GeSi network. From correlation between optical and electrical properties information is obtained about the behavior of band tails and the density of states in the gap.

Electron spin resonance of palladium-related defect in silicon

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4586-4589
Author(s):  
T. Ishiyama ◽  
S. Kimura ◽  
Y. Kamiura ◽  
Y. Yamashita
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Spin Resonance ◽  
Related Defect
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