SU-E-J-37: Combining Proton Radiography and X-Ray CT Information to Better Estimate Relative Proton Stopping Power in a Clinical Environment

2014 ◽  
Vol 41 (6Part7) ◽  
pp. 163-163
Author(s):  
C CollinsFekete ◽  
M Dias ◽  
P Doolan ◽  
David C Hansen ◽  
L Beaulieu ◽  
...  
2017 ◽  
Vol 62 (17) ◽  
pp. 6836-6852 ◽  
Author(s):  
Charles-Antoine Collins-Fekete ◽  
Sébastien Brousmiche ◽  
David C Hansen ◽  
Luc Beaulieu ◽  
Joao Seco

Author(s):  
Xiaoxia Yuan ◽  
Cangtao Zhou ◽  
Hua Zhang ◽  
Jiayong Zhong ◽  
Bo Han ◽  
...  

Abstract Ultrafast proton radiography has been frequently used for direct measurement of the electromagnetic fields around laser-driven capacitor-coil targets. The goal is to accurately infer the coil currents and their magnetic field generation for a robust magnetic field source that can lead to many applications. The technique often involves numerical calculations for synthetic proton images to reproduce experimental measurements. While electromagnetic fields are the primary source for proton deflections around the capacitor coils, stopping power and small angle deflection can also contribute to the observed experimental features. Here we present a comprehensive study of the proton radiography technique including all sources of proton deflections as a function of coil shapes, current magnitudes, and proton energies. Good agreements were achieved between experimental data and numerical calculations that include both the stopping power and small angle deflections, particularly when the induced coil currents were small.


2017 ◽  
Vol 62 (5) ◽  
pp. 1905-1919 ◽  
Author(s):  
K-W Jee ◽  
R Zhang ◽  
E H Bentefour ◽  
P J Doolan ◽  
E Cascio ◽  
...  

Author(s):  
Marc Granado-González ◽  
César Jesús-Valls ◽  
Thorsten Lux ◽  
Tony Price ◽  
Federico Sánchez

Abstract Proton beam therapy can potentially offer improved treatment for cancers of the head and neck and in paediatric patients. There has been asharp uptake of proton beam therapy in recent years as improved delivery techniques and patient benefits are observed. However, treatments are currently planned using conventional x-ray CT images due to the absence of devices able to perform high quality proton computed tomography(pCT) under realistic clinical conditions. A new plastic-scintillator-based range telescope concept, named ASTRA, is proposed here to measure the proton’s energy loss in a pCT system. Simulations conducted using GEANT4 yield an expected energy resolution of 0.7%. If calorimetric information is used the energy resolution could be further improved to about 0.5%. In addition, the ability of ASTRA to track multiple protons simultaneously is presented. Due to its fast components, ASTRA is expected to reach unprecedented data collection rates, similar to 10^8 protons/s.The performance of ASTRA has also been tested by simulating the imaging of phantoms. The results show excellent image contrast and relative stopping power reconstruction.


1984 ◽  
Vol 35 ◽  
Author(s):  
C. R. Wie ◽  
T. Vreeland ◽  
T. A. Tombrello

ABSTRACTMeV ion irradiation effects on semiconductor crystals, GaAs(100) and Si (111) and on an insulating crystal CaF2 (111) have been studied by the x-ray rocking curve technique using a double crystal x-ray diffractometer. The results on GaAs are particularly interesting. The strain developed by ion irradiation in the surface layers of GaAs (100) saturates to a certain level after a high dose irradiation (typically 1015/cm2), resulting in a uniform lattice spacing about 0.4% larger than the original spacing of the lattice planes parallel to the surface. The layer of uniform strain corresponds in depth to the region where electronic energy loss is dominant over nuclear collision energy loss. The saturated strain level is the same for both p-type and n-type GaAs. In the early stages of irradiation, the strain induced in the surface is shown to be proportional to the nuclear stopping power at the surface and is independent of electronic stopping power. The strain saturation phenomenon in GaAs is discussed in terms of point defect saturation in the surface layer.An isochronal (15 min.) annealing was done on the Cr-doped GaAs at temperatures between 200° C and 700° C. The intensity in the diffraction peak from the surface strained layer jumps at 200° C < T ≤ 300° C. The strain decreases gradually with temperature, approaching zero at T ≤ 500° C.The strain saturation phenomenon does not occur in the irradiated Si. The strain induced in Si is generally very low (less than 0.06%) and is interpreted to be mostly in the layers adjacent to the maximum nuclear stopping region, with zero strain in the surface layer. The data on CaF2 have been analysed with a kinematical x-ray diffraction theory to get quantitative strain and damage depth profiles for several different doses.


2019 ◽  
Vol 64 (6) ◽  
pp. 065022 ◽  
Author(s):  
Rongxiao Zhang ◽  
Gregory C Sharp ◽  
Kyung-Wook Jee ◽  
Ethan Cascio ◽  
Joseph Harms ◽  
...  

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