TH-A-141-07: Characterization of X-Ray Source and Detector Geometry for the Compton Backscatter Imaging System for Medical Applications

2013 ◽  
Vol 40 (6Part31) ◽  
pp. 524-524
Author(s):  
B Juneja ◽  
K Doxsee ◽  
D Gilland ◽  
D Hintenlang ◽  
E Dugan ◽  
...  
2010 ◽  
Vol 2010 ◽  
pp. 1-6 ◽  
Author(s):  
Jakob Kljun ◽  
Saša Petriček ◽  
Dušan Žigon ◽  
Rosana Hudej ◽  
Damijan Miklavčič ◽  
...  

Novel ruthenium(III) complexes with histamine[RuCl4(dmso-S)(histamineH)]⋅O(1a) and[RuCl4(dmso-S)(histamineH)](1b) have been prepared and characterized by X-ray structure analysis. Their crystal structures are similar and show a protonated amino group on the side chain of the ligand which is not very common for a simple heterocyclic derivative such as histamine. Biological assays to test the cytotoxicity of the compound1bcombined with electroporation were performed to determine its potential for future medical applications in cancer treatment.


2007 ◽  
Author(s):  
J. Michael O'Connor ◽  
Stephen J. Glick ◽  
Xing Gong ◽  
Clay Didier ◽  
Mufeed Mah'd
Keyword(s):  

2012 ◽  
Vol 70 (7) ◽  
pp. 1325-1330 ◽  
Author(s):  
Mohamed H. Abdelkader ◽  
Shyma M. Alkhateeb ◽  
David A. Bradley ◽  
Silvia Pani

2011 ◽  
Vol 38 (9) ◽  
pp. 5136-5145 ◽  
Author(s):  
Joop van Heekeren ◽  
Alexander Kostenko ◽  
Takayasu Hanashima ◽  
Hironari Yamada ◽  
Sjoerd Stallinga ◽  
...  

1986 ◽  
Vol 69 ◽  
Author(s):  
Phillip E. Russell

AbstractThe scanning electron microscope is now a common instrument in materials characterization laboratories. The basic role of the SEM as a topographic imaging system has steadily been expanding to include a wide variety of SEM-based analytical techniques. These techniques cover the range of basic semiconductor materials characterization to live-time device characterization of operating LSI or VLSI devices. This paper will introduce many of the more commonly used techniques, describe the modifications or additions to a conventional SEM required to utilize the techniques, and give examples of the use of such techniques. First, the types of signals available from a sample being irradiated by an electron beam will be reviewed. Then, where applicable, the type of spectroscopy or microscopy which has evolved to utilize the various signal types will be described. This will be followed by specific examples of the use of such techniques to solve problems related to semiconductor technology. Techniques to be emphasized will include: x-ray fluorescence spectroscopy, electron beam induced current (EBIC), stroboscopic voltage analysis, cathodoluminescence and electron beam IC metrology. Current and future trends of some of these techniques, as related to the semiconductor industry, will be discussed.


1991 ◽  
Vol 6 (7) ◽  
pp. 1469-1476 ◽  
Author(s):  
David R. Black ◽  
Harold E. Burdette ◽  
Masao Kuriyama ◽  
Richard D. Spal

A new diffraction imaging technique for the characterization of polycrystalline materials is proposed and applied to obtain direct information about individual grains and their size and shape distributions and, in turn, strains in these materials. Unlike traditional powder diffractometry, where divergent and focusing x-ray optics are essential to collect information from an ensemble of grains, the nearly parallel and monochromatic beam available from a synchrotron x-ray source is employed to observe and measure diffraction images from individual grains and component particles in consolidated materials prepared by various processes. Images can be recorded by traditional methods, such as film and pulse counting detectors, but modern image detectors, such as charge coupled device (CCD) detectors and image analyzers, make the proposed imaging technique more practical. Unlike traditional diffractometry, this new technique provides the ability to measure shape, size, and strain without model based analyses. The spatial distribution of strain within individual grains, displayed as a diffraction image (topograph), indicates the presence of defects, such as dislocations, subgrain boundaries, and precipitates, and sheds new light on the origins of residual strains (stresses) in industrial materials. The resolution of the imaging system used is limited to grains ∼10 μm or larger due to diffraction broadening (∼20” from the size effect) and the resolution of the recording medium.


2011 ◽  
Vol 66 (5) ◽  
pp. 308-313 ◽  
Author(s):  
A.L.M. Silva ◽  
C.D.R. Azevedo ◽  
C.A.B. Oliveira ◽  
J.M.F. Dos Santos ◽  
M.L. Carvalho ◽  
...  

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