SU-GG-T-401: Cell Survival Following X-Ray Activated Auger Electron Radiotherapy

2008 ◽  
Vol 35 (6Part15) ◽  
pp. 2817-2817
Author(s):  
J Dugas ◽  
M Varnes ◽  
E Sajo ◽  
C Welch ◽  
K Hogstrom
Keyword(s):  
Cell Survival ◽  
Auger Electron ◽  
X Ray ◽  
Electron Radiotherapy

Dependence of Cell Survival on Iododeoxyuridine Concentration in 35-keV Photon-Activated Auger Electron Radiotherapy

2011 ◽  
Vol 79 (1) ◽  
pp. 255-261 ◽  
Author(s):  
Joseph P. Dugas ◽  
Marie E. Varnes ◽  
Erno Sajo ◽  
Christopher E. Welch ◽  
Kyungmin Ham ◽  
...  
Keyword(s):  
Cell Survival ◽  
Auger Electron ◽  
Electron Radiotherapy

AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

1997 ◽  
Vol 482 ◽  
Author(s):  
Yu. V. Melnik ◽  
A. E. Nikolaev ◽  
S. I. Stepanov ◽  
A. S. Zubrilov ◽  
I. P. Nikitina ◽  
...  
Keyword(s):  
Growth Rate ◽  
Electron Beam ◽  
Vapor Phase ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Hydride Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Micro Analysis

AbstractGaN, AIN and AIGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AIN/GaN and AIGaN/GaN structures were investigated. AIGaN growth rate was about 1 μm/min. The thickness of the AIGaN layers ranged from 0.5 to 5 μm. The AIN concentration in AIGaN layers was varied from 9 to 67 mol. %. Samples were characterised by electron beam micro analysis, Auger electron spectroscopy, X-ray diffraction and cathodoluminescence.Electrical measurements performed on AIGaN/GaN/SiC samples indicated that undoped AIGaN layers are conducting at least up to 50 mol. % of AIN.

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