The x-ray time of flight method for investigation of ghosting in amorphous selenium-based flat panel medical x-ray imagers

2005 ◽  
Vol 32 (10) ◽  
pp. 3160-3177 ◽  
Author(s):  
A. W. Rau ◽  
L. Bakueva ◽  
J. A. Rowlands
Keyword(s):  
Time Of Flight ◽  
Amorphous Selenium ◽  
Flat Panel ◽  
X Ray ◽  
Time Of Flight Method

scholarly journals Recent Progress in X-ray and Neutron Phase Imaging with Gratings

2020 ◽  
Vol 4 (1) ◽  
pp. 9 ◽  
Author(s):  
Atsushi Momose ◽  
Hidekazu Takano ◽  
Yanlin Wu ◽  
Koh Hashimoto ◽  
Tetsuo Samoto ◽  
...  
Keyword(s):  
Recent Progress ◽  
Time Of Flight ◽  
Imaging Method ◽  
Phase Imaging ◽  
Imaging Methods ◽  
X Ray ◽  
Phase Microscopy ◽  
Grating Fabrication ◽  
Recent Developments ◽  
Time Of Flight Method

Under the JST-ERATO project in progress to develop X-ray and neutron phase-imaging methods together, recent achievements have been selected and reviewed after describing the merit and the principle of the phase imaging method. For X-ray phase imaging, recent developments of four-dimensional phase tomography and phase microscopy at SPring-8, Japan are mainly presented. For neutron phase imaging, an approach in combination with the time-of-flight method developed at J-PARC, Japan is described with the description of new Gd grating fabrication.

Investigation of lag and ghosting in amorphous selenium flat-panel x-ray detectors

2002 ◽  
Author(s):  
Wei Zhao ◽  
Giovanni DeCrescenzo ◽  
John A. Rowlands
Keyword(s):  
Amorphous Selenium ◽  
Flat Panel ◽  
X Ray

Strain and Particle Size of Palladium Metal Powders by Time-of-Flight Neutron Diffraction

1989 ◽  
Vol 33 ◽  
pp. 403-407
Author(s):  
A. C. Lawson ◽  
J. W. Conant ◽  
C. L. Talcott ◽  
M. A. David ◽  
J. Vaninetti ◽  
...  
Keyword(s):  
Particle Size ◽  
Neutron Diffraction ◽  
Powder Diffraction ◽  
Time Of Flight ◽  
Metal Powders ◽  
Line Broadening ◽  
X Ray ◽  
Palladium Powder ◽  
Time Of Flight Method ◽  
Palladium Metal

AbstractWe have determined the strain and particle size for several samples of palladium powder by time-of-flight nrutron powder diffraction on two different diffractometers and by x-ray powder diffraction. The results are compared and found to be in fair agreement. The time-of-flight method gives good enough precision to reveal deficiencies in the simple models used for strain and particle size line broadening.

Time of Flight of Drifting Electrons and Holes in Stabilized a-Se Film

2003 ◽  
Vol 764 ◽  
Author(s):  
Dong-Gil Lee ◽  
Ji-Koon Park ◽  
Jang-Yong Choi ◽  
Jae-Hyung Kim ◽  
Sang-Hee Nam
Keyword(s):  
Electric Field ◽  
Applied Electric Field ◽  
Time Of Flight ◽  
Amorphous Selenium ◽  
X Rays ◽  
Large Area ◽  
X Ray ◽  
Transit Times ◽  
Flat Panel Detectors ◽  
Photo Response

AbstractLarge area, flat panel detectors are being investigated for digital radiogrpahy and fluoroscopy. Theses detectors employ an x-ray conversion layer of photoconductor to detect x-rays. The amorphous selenium layer that is currently being studied for its use as an x-ray photoconductor is not pure a-Se but rather a-Se doped with 0.2-0.5% As and 10-30 ppm Cl, also known as stabilized a-Se. The suitability of the stabilized a-Se is largely determined by its charge on generating, transporting and trapping properties.In this paper, a conventional time-of-flight measurement was carried out to analyze the transport properties of charge carriers. A laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of the stabilized a-Se with thickness of 400 μm. The photo response signals of the hole and electron were measured at the applied electric field of 10 V/μm as a function of time. The measured transit times of the hole and electron were about 229.17μs and about 8.73μs at 10 V/μm, respectively. The measured mobility indicated a slight dependence with respect to the applied electric field with a range of 4-10 V/μm. The experimental results showed that the measured mobility of the hole and electron was 0.04584 cm2V-1s-1 and 0.00174 cm2V-1s-1 at the electric field of 10 V/μm.

Improved thermal stability of antimony-doped amorphous selenium film for X-ray flat-panel detectors

2012 ◽  
Vol 210 (3) ◽  
pp. 580-584 ◽  
Author(s):  
Zexiang Chen ◽  
Miao Dong ◽  
Chun Li ◽  
Shengzi Shao ◽  
Tianyong Hu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Amorphous Selenium ◽  
Flat Panel ◽  
X Ray ◽  
Selenium Film ◽  
Flat Panel Detectors ◽  
Thermal Stability Of

Experimental Evaluation of a-Se Flat-Panel X-ray Detector for Digital Radiography

2003 ◽  
Vol 764 ◽  
Author(s):  
Jang-Yong Choi ◽  
Ji-Koon Park ◽  
Dong-Gil Lee ◽  
Sang-Sik Kang ◽  
Sang-Hee Nam
Keyword(s):  
Digital Radiography ◽  
Vacuum State ◽  
Bias Field ◽  
Amorphous Selenium ◽  
Modulation Transfer ◽  
Large Area ◽  
Flat Panel ◽  
X Ray ◽  
Active Imaging ◽  
Imaging Performance

AbstractNowadays, large area, flat panel solid state detectors are being investigated for digital radiography. In this paper, development and evaluation of a selenium-based flat-panel digital xray detector are described. The prototype detector has a pixel pitch of 139μm and a total active imaging area of 7″×8.5″, giving a total of 1.9 million pixel. This detector include a x-ray imaging layer of amorphous selenium as a photoconductor which is evaporated in vacuum state on a TFT flat panel, to make signals in proportion to incident x-ray. The film thickness was about 500μm. To evaluate the imaging performance of the digital radiography (DR) system developed in our group, sensitivity, linearity of the response of exposure, the modulation transfer function(MTF) and detective quantum efficiency(DQE) of detector was measured. The measured sensitivity was 4.16×106 ehp/pixel mR at the bias field of 10 V/μm: The beam condition was 41.9 KeV. Measured MTF at 2.5 lp/mm was 52%, and the DQE at 1.5 lp/mm was 75%.

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