scholarly journals State-of-the-Art Infrared Detector Technology

2014 ◽  
Author(s):  
Michael A. Kinch
Keyword(s):  
State Of The Art ◽  
Infrared Detector ◽  
Detector Technology

Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector

2013 ◽  
Vol 61 (1) ◽  
pp. 211-220 ◽  
Author(s):  
P. Martyniuk ◽  
A. Rogalski
Keyword(s):  
Bias Voltage ◽  
State Of The Art ◽  
Structural Parameters ◽  
Infrared Detector ◽  
Differential Resistance ◽  
The State ◽  
Theoretical Modelling ◽  
Detector Performance ◽  
Type Detector ◽  
Hgcdte Detector

Abstract The paper reports on the medium wavelength infrared (MWIR) unipolar barrier infrared detector (UBIRD) nBn/B-n type (n-type barrier) HgCdTe detector’s photoelectrical performance. The UBIRD nBn/B-n type HgCdTe detector was modelled using commercially available software APSYS. Detailed analysis of the detector’s performance (such as dark current, photocurrent, responsivity, and detectivity) versus bias voltage, operating temperatures, and structural parameters (cap, barrier, and absorber’s doping as well as cap and barrier compositions) were performed pointing out optimal working conditions. Both conduction and valence band alignments of the HgCdTe nBn/B-n type detector structure was simulated stressing their importance on detectors performance. It was shown that higher operation temperature (HOT) conditions achieved by commonly used thermoelectric (TE) coolers allow to obtain detectivities of D* = (3-10)×109 cmHz1/2/W at T = 200 K for detectors with cut-off wavelength of 5.2 μm The differential resistance area product of RA = 0.15-0.4 cm2 at T = 230 K for bias voltage V = 50 mV was estimated. Finally, the state of the art of UBIRD HgCdTe nBn/B-n type detector performance was compared to InAs/GaSb/B-Al0.2Ga0.8Sb T2SLs nBn detector, InAs/GaSb T2SLs PIN and the HOT HgCdTe bulk photodiodes’ operated at near-room temperature (T = 230 K). It was shown that the RA product of the MWIR UBIRD nBn/B-n type HgCdTe detector can reach a comparable level to the state of the art of the HgCdTe HOT bulk photodiodes and two types of type-II superlattice detectors: PIN photodiodes and nBn detectors

Type-II superlattice infrared detector technology at Fraunhofer IAF

2016 ◽  
Author(s):  
Robert Rehm ◽  
Volker Daumer ◽  
Tsvetelina Hugger ◽  
Norbert Kohn ◽  
Wolfgang Luppold ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
Detector Technology

The development of HgCdTe infrared detector technology in China

2009 ◽  
Author(s):  
W. Lu ◽  
L. He ◽  
X. S. Chen ◽  
L. Ding ◽  
S. L. Sun ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Detector Technology

The impact of characterization techniques on HgCdTe infrared detector technology

1993 ◽  
Vol 8 (6S) ◽  
pp. 788-804 ◽  
Author(s):  
M B Reine ◽  
K R Maschhoff ◽  
S P Tobin ◽  
P W Norton ◽  
J A Mroczkowski ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Characterization Techniques ◽  
The Impact ◽  
Detector Technology
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