Antimonide Quantum Dot Nanostructures for Novel Photonic Device Applications

2013 ◽  
Author(s):  
Anthony Krier ◽  
Peter J. Carrington ◽  
Qiandong Zhuang ◽  
Robert J. Young ◽  
Manus Hayne ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Photonic Device ◽  
Device Applications

Highly oriented and ordered semiconductor nanowire arrays for photonic device applications

2005 ◽  
Author(s):  
Z. H. Wu ◽  
J. Gierak ◽  
E. Bourhis ◽  
A.-L. Biance ◽  
H. E. Ruda
Keyword(s):  
Nanowire Arrays ◽  
Semiconductor Nanowire ◽  
Photonic Device ◽  
Device Applications

Self-formed quantum dot structures and their potential device applications

2000 ◽  
pp. 19-95
Author(s):  
Naoki Yokoyama ◽  
Hiroshi Ishikawa ◽  
Yoshiki Sakuma ◽  
Yoshiaki Nakata ◽  
Yoshihiro Sugiyama
Keyword(s):  
Quantum Dot ◽  
Device Applications

Effect of network modifier ZnO on the dielectric studies of lithium boro Tellurite glasses for battery and photonic device applications

2019 ◽  
Author(s):  
Pallati Naresh ◽  
S. Aswini Priya ◽  
P. Murali Mohan ◽  
B. Kavitha ◽  
N. Narsimlu ◽  
...  
Keyword(s):  
Tellurite Glasses ◽  
Dielectric Studies ◽  
Network Modifier ◽  
Photonic Device ◽  
Device Applications

Spectroscopic investigations on Dy3+ ions doped zinc lead alumino borate glasses for photonic device applications

2019 ◽  
Vol 37 (1) ◽  
pp. 52-59 ◽  
Author(s):  
Nisha Deopa ◽  
Shubham Saini ◽  
Sumandeep Kaur ◽  
Aman Prasad ◽  
A.S. Rao
Keyword(s):  
Borate Glasses ◽  
Photonic Device ◽  
Spectroscopic Investigations ◽  
Device Applications

Quantification of Compositional Modulations in Self-Assembled Multisheet (Cd, Zn, Mn)Se Quantum Dot Structures

2001 ◽  
Vol 7 (S2) ◽  
pp. 202-203
Author(s):  
T. Topuria ◽  
P. Möck ◽  
N.D. Browning ◽  
L.V. Titova ◽  
M. Dobrowolska ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Imaging Technique ◽  
Optoelectronic Device ◽  
Scanning Transmission Electron Microscope ◽  
Contrast Imaging ◽  
Cdse Qds ◽  
Scanning Transmission ◽  
Device Applications ◽  
Incoherent Imaging ◽  
Z Contrast

CdSe/ZnSe based semiconductor quantum dot (Q D) structures are a promising candidate for optoelectronic device applications. However, key to the luminescence properties is the cation distribution and ordering on the atomic level within the CdSe QDs/agglomerates. Here the Z contrast imaging technique in the scanning transmission electron microscope (STEM) is employed to study multisheet (Cd,Zn,Mn)Se QD structures. Since Z-contrast is an incoherent imaging technique, problems associated with strain contrast in conventional TEM are avoided an accurate size and composition determinations can be made.For this work we used a JEOL JEM 201 OF field emission STEM/TEM. The sample was grown by molecular beam epitaxy in order to achieve vertical self-ordering of Cd rich quasi-2D platelet This sample comprises 8 sequences of 10 ML (2.83 nm)Zn0.9Mn0.1Se cladding layer and 0.3 ML (0.09 nm) CdSe sheet, a further 10 ML of Zn0.9Mn0.1Se, and a 50 nm ZnSe capping layer.

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