Silicon-based nonlinear devices for high-speed optical communications

SPIE Newsroom ◽  
2008 ◽  
Author(s):  
Haisheng Rong
2008 ◽  
Author(s):  
Haisheng Rong ◽  
Simon Ayotte ◽  
Shengbo Xu ◽  
Oded Cohen ◽  
Mario Paniccia

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 39
Author(s):  
Masahiro Nada ◽  
Fumito Nakajima ◽  
Toshihide Yoshimatsu ◽  
Yasuhiko Nakanishi ◽  
Atsushi Kanda ◽  
...  

We discuss the structural consideration of high-speed photodetectors used for optical communications, focusing on vertical illumination photodetectors suitable for device fabrication and optical coupling. We fabricate an avalanche photodiode that can handle 100-Gbit/s four-level pulse-amplitude modulation (50 Gbaud) signals, and pin photodiodes for 100-Gbaud operation; both are fabricated with our unique inverted p-side down (p-down) design.


2021 ◽  
Vol 255 ◽  
pp. 01002
Author(s):  
Daniel Benedikovic ◽  
Leopold Virot ◽  
Guy Aubin ◽  
Jean-Michel Hartmann ◽  
Farah Amar ◽  
...  

Optical photodetectors are at the forefront of photonic research since the rise of integrated optics. Photodetectors are fundamental building blocks for chip-scale optoelectronics, enabling conversion of light into an electrical signal. Such devices play a key role in many surging applications from communication and computation to sensing, biomedicine and health monitoring, to name a few. However, chip integration of optical photodetectors with improved performances is an on-going challenge for mainstream optical communications at near-infrared wavelengths. Here, we present recent advances in heterostructured silicon-germanium-silicon p-i-n photodetectors, enabling high-speed detection on a foundry-compatible monolithic platform.


Author(s):  
R. Lefevre ◽  
E. Legros ◽  
A. Thiam ◽  
P. Andre ◽  
S. Vuye

Author(s):  
Joseph Fridlander ◽  
Victoria Rosborough ◽  
Fengqiao Sang ◽  
Sergio Pinna ◽  
Steven Estrella ◽  
...  

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