High power narrow far-field broad-stripe semiconductor lasers with second-order metal grating feedback

2012 ◽  
Author(s):  
Yong Yi Chen ◽  
Li Qin ◽  
Peng Jia ◽  
Yong Qiang Ning ◽  
Yun Liu ◽  
...  
2012 ◽  
Vol 57 (17) ◽  
pp. 2083-2086 ◽  
Author(s):  
JunXiu Shi ◽  
Li Qin ◽  
Yun Liu ◽  
Nan Zhang ◽  
Jian Zhang ◽  
...  

2011 ◽  
Vol 84-85 ◽  
pp. 590-593
Author(s):  
Zhong Liang Qiao ◽  
Si Yu Zhang ◽  
Xin Gao ◽  
Peng Lu ◽  
Hui Li ◽  
...  

According to the principle of carrier diffusion, aluminum nitride (AlN) coating, and RIE deep etching technology are implemented, 1064 nm broad area distribution electrode lasers have been obtained exhibiting near single lobe near and far field. We report electrode pattern lasers emitting at 1064 nm with the minimal full width at half maximum (FWHM) horizontal angle of 2.7° while the maximum continuous-wave output power up to 3.65 W and slope efficiencies as high as 0.85 W/A.


2006 ◽  
Author(s):  
Sanjay Krishna ◽  
Ralph Dawson

2021 ◽  
Vol 64 ◽  
pp. 102574
Author(s):  
Juanfen Wang ◽  
Xuan Zhang ◽  
Lingzhen Yang ◽  
Jie Chen ◽  
Guangye Yang

1996 ◽  
Author(s):  
Ruediger Maestle ◽  
Wilfried Plass ◽  
J. Chen ◽  
Christian Hembd-Soellner ◽  
Adolf Giesen ◽  
...  

2016 ◽  
Vol 42 (12) ◽  
pp. 1159-1162 ◽  
Author(s):  
V. V. Dudelev ◽  
S. V. Zazulin ◽  
E. D. Kolykhalova ◽  
S. N. Losev ◽  
A. G. Deryagin ◽  
...  

1988 ◽  
Vol 52 (12) ◽  
pp. 939-941 ◽  
Author(s):  
N. W. Carlson ◽  
G. A. Evans ◽  
J. M. Hammer ◽  
M. Lurie ◽  
L. A. Carr ◽  
...  
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