Room-Temperature InGaAs Detector Arrays For 2.5 µm

Author(s):  
G. H. Olsen ◽  
A. M. Joshi ◽  
S. M. Mason ◽  
K. M. Woodruff ◽  
E. Mykietyn ◽  
...  
1989 ◽  
Author(s):  
G. H. Olsen ◽  
A. M. Joshi ◽  
E. Mykietyn ◽  
J. Colosi ◽  
K. M. Woodruff ◽  
...  

1988 ◽  
Author(s):  
G H. Olsen ◽  
A M. Joshi ◽  
V. S. Ban ◽  
K. M. Woodruff ◽  
G. A. Gasparian ◽  
...  

2012 ◽  
Author(s):  
Yaoming Zhu ◽  
Xue Li ◽  
Jun Wei ◽  
Jianwei Li ◽  
Hengjing Tang ◽  
...  

1991 ◽  
Author(s):  
Gregory H. Olsen ◽  
Abhay M. Joshi ◽  
Vladimir S. Ban

1991 ◽  
Vol 27 (17) ◽  
pp. 1566 ◽  
Author(s):  
A.J. Moseley ◽  
M.Q. Kearley ◽  
R.C. Morris ◽  
J. Urquhart ◽  
M.J. Goodwin ◽  
...  

2009 ◽  
Author(s):  
Peter Dixon ◽  
Navneet Masaun ◽  
Michael Evans ◽  
John Ueng-McHale ◽  
John Trezza ◽  
...  

2013 ◽  
Vol 320 ◽  
pp. 150-154
Author(s):  
Hao Ren ◽  
Qun Zeng ◽  
Xi Hui Liang

Nd:YAG thin films have been prepared on Si (100) substrates by electron beam evaporation deposition. The surface morphologies, crystalline phases and optical properties of the Nd:YAG thin films were characterized by x-ray diffraction, scanning electron microscopy, photoluminescence spectroscopy, and spectrophotometer. The crystallization of Nd:YAG thin films was improved after annealing at 1100 °C for 1 hour in vacuum. Excited by a Ti:sapphire laser at 808 nm, photoluminescence spectra of Nd:YAG thin films were measured at room temperature, and the transition of4F3/24I11/2of Nd3+in YAG in the region of 1064 nm were detected by a liquid nitrogen cooled InGaAs detector array.


1994 ◽  
Vol 299 ◽  
Author(s):  
J. F. Butler ◽  
F. P. Doty ◽  
B. Apotovsky ◽  
S. J. Friesenhahn ◽  
C. Lingren

AbstractResults of a program to improve the performance of Cd1−xZnxTe detectors by adjusting growth parameters to achieve low-strain, high purity low defect crystals, investigating surface effect phenomena and contacting methods, and establishing reproducible manufacturing methods are reviewed and discussed. Processing and fabrication methods were developed which are applicable throughout the composition range. Energy spectra for room temperature Cd1−xZnxTe detectors exhibit resolutions (FWHM) from 2.16 keV at 14 keV to 6.9 keV at 122 keV. An energy resolution of 910 eV at 5.9 keV was achieved at −25 C. Stable ohmic contacts and gamma ray detection for ZnTe are reported for the first time. Applications of Cd1−xZnxTe to nuclear medicine and X-ray fluorescence are discussed. New gamma ray imagers using Cd1-−ZnxTe detector arrays are described, and imaging data for a 32 × 32 monolithic array of 1 mm2 elements on a 42mm × 42mm substrate are presented.


2012 ◽  
Author(s):  
Selim Eminoglu ◽  
Yigit Uygar Mahsereci ◽  
Caglar Altiner ◽  
Tayfun Akin

2013 ◽  
Author(s):  
Selim Eminoglu ◽  
Murat Isikhan ◽  
Nusret Bayhan ◽  
M. Ali Gulden ◽  
O. Samet Incedere ◽  
...  

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