Novel quantum real-space transfer in semiconductor heterostructures

2012 ◽  
Author(s):  
Chuan Jin ◽  
Zhenqiang Chen ◽  
Jianxin Chen
Keyword(s):  
Real Space ◽  
Semiconductor Heterostructures ◽  
Real Space Transfer

scholarly journals Увеличение насыщенной скорости дрейфа электронов в pHEMT-гетероструктурах с донорно-акцепторным легированием

2018 ◽  
Vol 44 (6) ◽  
pp. 77
Author(s):  
Д.Ю. Протасов ◽  
Д.В. Гуляев ◽  
А.К. Бакаров ◽  
А.И. Торопов ◽  
Е.В. Ерофеев ◽  
...  
Keyword(s):  
Drift Velocity ◽  
High Electron Mobility Transistor ◽  
Real Space ◽  
Electron Drift Velocity ◽  
Hot Electrons ◽  
Electron Drift ◽  
High Electron ◽  
High Electron Mobility ◽  
Donor Acceptor ◽  
Real Space Transfer

AbstractField dependences of the electron-drift velocity in typical pseudomorphic high-electron-mobility transistor (pHEMT) heteroepitaxial structures (HESs) and in those with donor–acceptor doped (DApHEMT) heterostructures with quantum-well (QW) depth increased by 0.8–0.9 eV with the aid of acceptor layers have been studied by a pulsed technique. It is established that the saturated electron-drift velocity in DA-pHEMT-HESs is 1.2–1.3 times greater than that in the usual pHEMT-HESs. The electroluminescence (EL) spectra of DA-pHEMT-HESs do not contain emission bands related to the recombination in widebandgap layers (QW barriers). The EL intensity in these HESs is not saturated with increasing electric field. This is indicative of a suppressed real-space transfer of hot electrons from QW to barrier layers, which accounts for the observed increase in the saturated electron-drift velocity.

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