Bridging the gaps between mask inspection/review systems and actual wafer printability using computational metrology and inspection (CMI) technologies

2012 ◽  
Author(s):  
Linyong Pang ◽  
Vikram Tolani ◽  
Masaki Satake ◽  
Peter Hu ◽  
Danping Peng ◽  
...  
Keyword(s):  
Computational Metrology ◽  
Mask Inspection

Computational metrology and inspection (CMI) in mask inspection, metrology, review, and repair

2012 ◽  
Vol 1 (4) ◽  
Author(s):  
Linyong Pang ◽  
Danping Peng ◽  
Peter Hu ◽  
Dongxue Chen ◽  
Lin He ◽  
...  
Keyword(s):  
Computational Metrology ◽  
Mask Inspection

Plasma-based sources of extreme ultraviolet radiation for lithography and mask inspection

2018 ◽  
Vol 189 (03) ◽  
pp. 323-334 ◽  
Author(s):  
D.B. Abramenko ◽  
P.S. Antsiferov ◽  
D.I. Astakhov ◽  
Aleksandr Yu. Vinokhodov ◽  
Il'ya Yu. Vichev ◽  
...  
Keyword(s):  
Ultraviolet Radiation ◽  
Extreme Ultraviolet ◽  
Mask Inspection ◽  
Extreme Ultraviolet Radiation

Study of advanced mask inspection optics with super-resolution method for next-generation mask fabrication

2009 ◽  
Author(s):  
Ryoichi Hirano ◽  
Masatoshi Hirono ◽  
Riki Ogawa ◽  
Nobutaka Kikuiri ◽  
Kenichi Takahara ◽  
...  
Keyword(s):  
Super Resolution ◽  
Next Generation ◽  
Resolution Method ◽  
Mask Inspection ◽  
Mask Fabrication

A Hull Normal Based Approach for Cylindrical Size Assessment

2011 ◽  
Vol 133 (1) ◽  
Author(s):  
Steven Turek ◽  
Sam Anand
Keyword(s):  
New York ◽  
Least Squares ◽  
Measured Data ◽  
Size Determination ◽  
Mathematical Definition ◽  
Dimensioning And Tolerancing ◽  
Normal Method ◽  
Computational Metrology ◽  
American Society ◽  
Definition Of

Digital measurement devices, such as coordinate measuring machines, laser scanning devices, and digital imaging, can provide highly accurate and precise coordinate data representing the sampled surface. However, this discrete measurement process can only account for measured data points, not the entire continuous form, and is heavily influenced by the algorithm that interprets the measured data. The definition of cylindrical size for an external feature as specified by ASME Y14.5.1M-1994 [The American Society of Mechanical Engineers, 1995, Dimensioning and Tolerancing, ASME Standard Y14.5M-1994, ASME, New York, NY; The American Society of Mechanical Engineers, 1995, Mathematical Definition of Dimensioning and Tolerancing Principles, ASME Standard Y14.5.1M-1994, ASME, New York, NY] matches the analytical definition of a minimum circumscribing cylinder (MCC) when rule no. 1 [The American Society of Mechanical Engineers, 1995, Dimensioning and Tolerancing, ASME Standard Y14.5M-1994, ASME, New York, NY; The American Society of Mechanical Engineers, 1995, Mathematical Definition of Dimensioning and Tolerancing Principles, ASME Standard Y14.5.1M-1994, ASME, New York, NY] is applied to ensure a linear axis. Even though the MCC is a logical choice for size determination, it is highly sensitive to the sampling method and any uncertainties encountered in that process. Determining the least-sum-of-squares solution is an alternative method commonly utilized in size determination. However, the least-squares formulation seeks an optimal solution not based on the cylindrical size definition [The American Society of Mechanical Engineers, 1995, Dimensioning and Tolerancing, ASME Standard Y14.5M-1994, ASME, New York, NY; The American Society of Mechanical Engineers, 1995, Mathematical Definition of Dimensioning and Tolerancing Principles, ASME Standard Y14.5.1M-1994, ASME, New York, NY] and thus has been shown to be biased [Hopp, 1993, “Computational Metrology,” Manuf. Rev., 6(4), pp. 295–304; Nassef, and ElMaraghy, 1999, “Determination of Best Objective Function for Evaluating Geometric Deviations,” Int. J. Adv. Manuf. Technol., 15, pp. 90–95]. This work builds upon previous research in which the hull normal method was presented to determine the size of cylindrical bosses when rule no. 1 is applied [Turek, and Anand, 2007, “A Hull Normal Approach for Determining the Size of Cylindrical Features,” ASME, Atlanta, GA]. A thorough analysis of the hull normal method’s performance in various circumstances is presented here to validate it as a superior alternative to the least-squares and MCC solutions for size evaluation. The goal of the hull normal method is to recreate the sampled surface using computational geometry methods and to determine the cylinder’s axis and radius based upon it. Based on repetitive analyses of random samples of data from several measured parts and generated forms, it was concluded that the hull normal method outperformed all traditional solution methods. The hull normal method proved to be robust by having a lower bias and distributions that were skewed toward the true value of the radius, regardless of the amount of form error.

Design-Aware Mask Inspection

2012 ◽  
Vol 31 (5) ◽  
pp. 690-702 ◽  
Author(s):  
Abde Ali Kagalwalla ◽  
Puneet Gupta ◽  
Christopher J. Progler ◽  
Steve McDonald
Keyword(s):  
Mask Inspection

Microwave discharge plasma production with resonant cavity for EUV mask inspection tool

2015 ◽  
Vol 54 (12) ◽  
pp. 126701
Author(s):  
Saya Tashima ◽  
Masami Ohnishi ◽  
Waheed Hugrass ◽  
Keita Sugimoto ◽  
Masatugu Sakaguchi ◽  
...  
Keyword(s):  
Discharge Plasma ◽  
Microwave Discharge ◽  
Resonant Cavity ◽  
Plasma Production ◽  
Mask Inspection

Laser-assisted discharge produced plasma (LDP) EUV source for actinic patterned mask inspection (APMI)

2021 ◽  
Author(s):  
Safak Sayan ◽  
Kishore K. Chakravorty ◽  
Yusuke Teramoto ◽  
Takahiro Shirai ◽  
Shunichi Morimoto ◽  
...  
Keyword(s):  
Mask Inspection

Development of element technologies for EUVL

2015 ◽  
Vol 4 (4) ◽  
Author(s):  
Hiroo Kinoshita ◽  
Takeo Watanabe ◽  
Tetsuo Harada
Keyword(s):  
Extreme Ultraviolet ◽  
Random Access ◽  
High Volume ◽  
Development Stage ◽  
Extreme Ultraviolet Lithography ◽  
Applied Physics ◽  
Reflectivity Measurement ◽  
Ultraviolet Lithography ◽  
Mask Inspection ◽  
The University

AbstractThirty years have passed since the first report on extreme ultraviolet lithography (EUVL) was presented at the annual meeting of the Japanese Society of Applied Physics in 1986. This technology is now in the manufacturing development stage. The high-volume manufacturing of dynamic-random-access-memory (DRAM) chips with a line width of 15 nm is expected in 2016. However, there are critical development issues that remain: generating a stand-alone EUV source with a higher power and producing a mask inspection tool for obtaining zero-defect masks. The Center for EUVL at the University of Hyogo was established in 2010. At present, it utilizes various types of equipment, such as an EUV mask defect inspection tool, an interference-lithography system, a device for measuring the thickness of carbon contamination film deposited by resist outgassing, and reflectivity measurement systems.

Verification of optics for the die-to-wafer-like image mask inspection

2008 ◽  
Author(s):  
Akira Takada ◽  
Toru Tojo ◽  
Masato Shibuya
Keyword(s):  
Mask Inspection ◽  
Image Mask
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