Physics Of In-Situ Laser Deposition Of Superconducting Thin Films

1990 ◽  
Author(s):  
H. S. Kwok ◽  
D. T. Shaw ◽  
Q. Y. Ying ◽  
J. P. Zheng ◽  
S. Witanachchi ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Deposition ◽  
Superconducting Thin Films

Effects of Processing Parameters on the Excimer Laser Deposition of Yba2Cu3O7-δ Thin Films

1989 ◽  
Vol 169 ◽  
Author(s):  
R. E. Muenchausen ◽  
X. D. Wu ◽  
R. C. Dye ◽  
K. M. Hubbard ◽  
R. C. Estler ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Energy ◽  
Processing Parameters ◽  
Spot Size ◽  
Laser Deposition ◽  
Angular Distributions ◽  
Superconducting Thin Films ◽  
Film Properties ◽  
Optimized Conditions

AbstractSystematic studies of the effects of pulsed laser deposition processing parameters on plume dynamics and resultant film properties have been performed. Plume angular distributions, cosm(θ), were observed to be variable between 1 > m > 15 depending on laser energy density and spot size. Under optimized conditions, epitaxial, superconducting thin films could be grown in‐situ on a variety of single‐crystal substrates. High quality, 2000 Å  ss thick films were obtained at deposition rates approaching 150 Å/sec.

Study of In‐Situ Laser‐Deposition of Superconducting Thin Films by In‐Situ Resistance Measurement

1989 ◽  
Vol 169 ◽  
Author(s):  
Q.Y. Ying ◽  
H.S. Kim ◽  
D.T. Shaw ◽  
H.S. Kwok
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Final Stage ◽  
Temporal Change ◽  
Interface Reaction ◽  
Laser Deposition ◽  
Laser Evaporation ◽  
Superconducting Thin Films ◽  
Electric Resistance

AbstractThe electric resistance was measured in real time during laser evaporation deposition of superconducting thin films. It was found that different substrates led to different behaviors in the temporal change of the resistance. The results are consistent with the processes of nucleation, interface reaction and bulk‐like growth. Structural transformation was also observed due to oxygen backfilling at the final stage of the deposition.

In‐Situ Patterning and Critical Current Density Measurements in Laser Deposited High‐Tc Superconducting Thin Films

1989 ◽  
Vol 169 ◽  
Author(s):  
R. K. Singh ◽  
C. B. Lee ◽  
P. Tiwari ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Critical Current Density ◽  
Critical Current ◽  
Current Density ◽  
Deposition Process ◽  
Laser Deposition ◽  
Zero Magnetic Field ◽  
Transport Critical Current Density ◽  
Superconducting Thin Films

AbstractWe have performed transport critical current density, Jc, measurements on epitaxial superconducting thin films which were in‐situ patterned during the laser deposition process. Shadow masks of various dimensions were placed close to the substrate to generate different patterns. Epitaxial films of YBa2Cu3O7 on (100) SrTiO3, (100) YSZ, and (100) LaA1O3 substrates were fabricated at low processing temperatures (500‐650°Q by the biased laser deposition technique in an oxygen ambient of 200 mtorr. Excellent quality superconducting thin films were formed on patterned areas. The critical temperature of the films was found to be in the range of 88 to 90 K, and the best critical current density values (at 77K, and zero magnetic field) greater than 6.5 x106 Amps/cm2 were obtained for silver doped YBa2Cu3O7 films on (100)LaAlO3 substrates.

Preparation of BaTiO3 thin films using pulsed KrF laser deposition and IN SITU laser annealing

1998 ◽  
Vol 20 (1-4) ◽  
pp. 87-94
Author(s):  
Atsushi Ito ◽  
Akihiko Machida ◽  
Minoru Obara
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Laser Deposition ◽  
Krf Laser

scholarly journals Superconducting thin films of MgB2 on Si by pulsed laser deposition

2001 ◽  
Vol 353 (1-2) ◽  
pp. 1-4 ◽  
Author(s):  
A. Brinkman ◽  
D. Mijatovic ◽  
G. Rijnders ◽  
V. Leca ◽  
H.J.H. Smilde ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superconducting Thin Films

Luminescent Characteristics of Pulsed Laser Deposited Epitaxial Eu-Doped Y2O3 Films

1999 ◽  
Vol 574 ◽  
Author(s):  
D. Kumar ◽  
K. G. Cho ◽  
Zhang Chen ◽  
V. Craciun ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Yttrium Oxide ◽  
Lattice Mismatch ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Deposition Parameters

AbstractThe growth, structural and cathodoluminescent (CL) properties of europium activated yttrium oxide (Eu:Y2O3) thin films are reported. The Eu:Y2O3 films were grown in-situ using a pulsed laser deposition technique. Our results show that Eu:Y2O3 films can grow epitaxially on (100) LaAlO3 substrates under optimized deposition parameters. The epitaxial growth of Eu:Y2O3 films on LaAlO3, which has a lattice mismatch of ∼ 60 %, is explained by matching of the atom positions in the lattices of the film and the substrate after a rotation. CL data from these films are consistent with highly crystalline Eu:Y2O3 films with an intense CL emission at 611 nm.

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