Characterization Of A Multiple-Step In-Situ Plasma Enhanced Chemical Vapor Deposition (PECVD) Tetraethylorthosilicate (TEOS) Planarization Scheme For Submicron Manufacturing

1990 ◽  
Author(s):  
Jeannine M. Perchard ◽  
Howard E. Smith ◽  
Robert O'Connor ◽  
Jeff Olsen ◽  
Kam Law
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Multiple Step

In Situ Characterization of Metallorganic Chemical Vapor Deposition

1989 ◽  
Vol 158 ◽  
Author(s):  
R. Scarmozzino ◽  
T. Cacouris ◽  
R.M. Osgood
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
In Situ Characterization ◽  
Novel Technique ◽  
Cvd Growth ◽  
Laser Cvd ◽  
Metallization Process

ABSTRACTIn situ measurement of resistance has been used for the realtime monitoring of metallorganic chemical vapor deposition (CVD) growth characteristics. In particular, a novel technique for measuring metallorganic CVD activation energies is presented. The micron scale geometry of the experiment makes it relevant to work in localized laser CVD. The technique has been used to measure the CVD activation energy of dimethylaluminum hydride (DMAlH). In addition, a variant of the technique has been used to study the growth stage of a resistless two-step metallization process (nucleation / selective CVD) employing DMAIH as the source gas in both steps.

Characterization of Palladium Acetylacetonate as a CVD Precursor for Pd Metallization

1992 ◽  
Vol 282 ◽  
Author(s):  
Steven P. Kowalczyk ◽  
Michael Ldgdlund ◽  
Mats Fahlman ◽  
William R. Salaneck
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Treatment ◽  
Vapor Deposition ◽  
Film Formation ◽  
Chemical Vapor ◽  
X Ray ◽  
Palladium Acetylacetonate ◽  
Metallic Palladium

ABSTRACTPalladium acetylacctonate has received much consideration as a possible precursor for chemical vapor deposition of metallic palladium films for a variety of microelectronic applications. We have studied the adsorption and decomposition of palladium acetylacetonate ongold, polyimide, silicon and silver surfaces to understand the initial mechanisms of metallic palladium film formation. In situ x-ray photoelcctron spectroscopy was used to characterized the films after adsorption and their decomposition after thermal treatment or laser irradiation.

RTP-CVD of Si Materials and Devices for ULSI Applications

1991 ◽  
Vol 220 ◽  
Author(s):  
D. L. Kwong ◽  
T. Y. Hsieh ◽  
K. H. Jung
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Exposure ◽  
Epitaxial Layers ◽  
High Quality ◽  
Si Epitaxy ◽  
Optical Waveguiding

ABSTRACTRapid thermal processing chemical vapor deposition (RTP-CVD) has received considerable attention because of its ability to reduce many of the processing problems associated with thermal exposure in conventional chemical vapor deposition, while still retaining the ability to grow high quality epitaxial layers. In this paper, the principles of the RTP-CVD system are described, followed by results of experiments on in-situ cleaning, undoped Si epitaxy and in-situ doped Si epitaxy, and selective Si deposition using oxide masks. Our results show that RTP-CVD is capable of growing high quality, epitaxial layers with sharp, dopant transition profiles. Selective deposition was achieved without the use of HC1. We also studied the growth and characterization of GexSi1−x films for optical waveguiding.

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