Correlation Of Optical Properties And Surface Roughness Of Polycrystalline Diamond Films

Author(s):  
Tom Feng
2006 ◽  
Vol 54 (11) ◽  
pp. 1871-1874 ◽  
Author(s):  
Qingfeng Su ◽  
Jianmin Liu ◽  
Linjun Wang ◽  
Weimin Shi ◽  
Yiben Xia

2000 ◽  
Vol 15 (1) ◽  
pp. 212-217 ◽  
Author(s):  
Qing Zhang ◽  
S. F. Yoon ◽  
J. Ahn ◽  
Bo Gan ◽  
Rusli

The influence of the carbon network structure of polycrystalline diamond films that were prepared from a mixture of H2, CH4, and N2 using microwave-enhanced plasma chemical vapor deposition on electron field emission has been systematically investigated. With increasing nitrogen gas flow ratio of [ N2]/[H2 + CH4 + N2], the film hardness and surface roughness of the as-grown films decreased, and the concentration ratio of amorphous sp2-bonded carbon clusters and mixed sp2−sp3 carbon structures to tetrahedrally bonded amorphous carbon phases increased. Correspondingly, the turn-on voltage for electron emission decreased. After the surface post-treatment by pure hydrogen plasma exposure, the concentration ratio was clearly found to have increased dramatically and the turn-on voltage decreased significantly for the films produced at small nitrogen flow ratio. Our results suggest that the influence of the concentration ratio on electron field emission is much more significant than that of the surface roughness of the polycrystalline diamond films studied in this paper.


1990 ◽  
Author(s):  
Andrew J. Gatesman ◽  
Robert H. Giles ◽  
Jerry Waldman ◽  
L. P. Bourget ◽  
Richard S. Post

1995 ◽  
Vol 416 ◽  
Author(s):  
Z. Yin ◽  
H. S. Tan ◽  
F. W. Smith

ABSTRACTThe measurement of the optical constants for a rough surface thin film is needed for CVD polycrystalline diamond films which typically have surface roughnesses of the order of tens to hundreds of nm. In this paper, we present a method for determining the optical constants n and k as well as the surface roughness σ for a rough surface diamond thin film. By using the theory of optical reflectance (R) and transmittance (T) for a thin film with incorporation of rough surface scattering factors which are functions of the surface roughness a, the following function can be obtained: R=R(n,k,σ,λ,d), T=T(n,k,σ,λ,d), and Rp=Rp(n,k,σ,λ,d), where λ and d are the incident wavelength and film thickness, respectively. Rp is the reflectance from the smooth back surface of the thin film. From the experimental data for R, T, and Rp in a range of wavelengths, the optical constants n, k, and σ can be extracted by solving the above non-linear equations using a three-dimensional Newton-Raphson technique. Examples of experimental results on diamond films and other examples of simulated results are presented to illustrate the usefulness and validity of this technique.


1996 ◽  
Vol 423 ◽  
Author(s):  
I. St. Omer ◽  
T. Stacy ◽  
E. M. Charlson ◽  
E. J. Charlson

AbstractA number of techniques have been used to smooth polycrystalline diamond films. Recent work in substrate seeding with nanocrystalline diamond powder, alone or in a carrier fluid, has shown that diamond seeding improves nucleation density and reduces diamond surface roughness. In this work, silicon substrates were seeded using a commercially available waterbased 0.1 micrometer diamond polishing suspension. Growth was achieved using conventional hot-filament chemical vapor deposition (HFCVD). Films were characterized using optical microscopy, scanning electron microscopy (SEM), x-ray diffraction (XRD), and surface profilometry. The resulting diamond films exhibited well-faceted crystals, small grain size and minimal surface roughness. Additionally, the silicon substrate was chemically etched in order to permit examination of the backside of the diamond film. Results show that the diamond surface at the silicon-diamond interface is ultra-smooth. Comparison of the backside of these surfaces with those prepared using conventional diamond grit abrasion indicates that a significant improvement in surface quality is achieved using this diamond seeding technique.


Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).


Nanoscale ◽  
2020 ◽  
Author(s):  
Feifei ZHANG ◽  
Jérôme Plain ◽  
Davy Gerard ◽  
Jérôme Martin

The surface topography is known to play an important role on the near- and far- field optical properties of metallic nanoparticles. In particular, aluminum (Al) nanoparticles are commonly fabricated through...


CIRP Annals ◽  
1990 ◽  
Vol 39 (1) ◽  
pp. 585-588 ◽  
Author(s):  
R. Komanduri ◽  
L.L. Fehrenbacher ◽  
L.M. Hanssen ◽  
A. Morrish ◽  
K.A. Snail ◽  
...  

1994 ◽  
Vol 3 (4-6) ◽  
pp. 663-671 ◽  
Author(s):  
J. Ullmann ◽  
A. Weber ◽  
B. Mainz ◽  
J. Stiegler ◽  
T. Schuhrke

2007 ◽  
Vol 24-25 ◽  
pp. 377-382
Author(s):  
Rong Fa Chen ◽  
Dun Wen Zuo ◽  
Yu Li Sun ◽  
Wen Zhuang Lu ◽  
D.S. Li ◽  
...  

Although research on various diamond polishing techniques has been carried for years, some issues still need to be examined in order to facilitate application on large areas in a cost-efficient manner. A compositive technique for machining efficiently thick diamond films prepared by DC plasma arc jet is reported in the present paper. A two-stage polishing was applied on thick polycrystalline diamond films, by employing first electro-discharge machining (EDM) for rough polishing and subsequently mechanical polishing for finishing operations. Experimental results obtained clearly indicate the applicability of the proposed two-stage technique for fabricating transparent diamond films that can be used for the production of X-ray windows. Appropriate etching with EDM is an effective pretreatment method for enhancing the efficiency of rough polishing process in mechanical polishing of thick diamond film. The machined surfaces of diamond films are studied by Scanning Electron Microscope (SEM) and Raman Scattering Spectroscopy (Raman).


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