Integrated Optical Coupling Element On Silicon Substrate

1989 ◽  
Author(s):  
Jaakko Aarnio ◽  
Matti Leppihalme
Keyword(s):  
Silicon Substrate ◽  
Optical Coupling ◽  
Coupling Element ◽  
Integrated Optical

Vibration Sensor Using Integrated Optical Coupling Element

1985 ◽  
pp. 5-8
Author(s):  
S. Honkanen ◽  
S. Tammela ◽  
P. Koivisto ◽  
M. Leppihalme ◽  
M. Mäklin
Keyword(s):  
Vibration Sensor ◽  
Optical Coupling ◽  
Coupling Element ◽  
Integrated Optical

scholarly journals Integrated optical coupling element for functional genomic analysis biosensor

2004 ◽  
Author(s):  
Corinne Vergnenegre ◽  
Charlotte Bringer ◽  
Veronique Bardinal ◽  
Thierry Camps ◽  
Chantal Fontaine ◽  
...  
Keyword(s):  
Genomic Analysis ◽  
Functional Genomic ◽  
Optical Coupling ◽  
Coupling Element ◽  
Functional Genomic Analysis ◽  
Integrated Optical

Integrated optical spectrum analyser using planar technology on oxidised silicon substrate

1983 ◽  
Vol 19 (21) ◽  
pp. 883 ◽  
Author(s):  
S. Valette ◽  
J. Lizet ◽  
P. Mottier ◽  
J.P. Jadot ◽  
S. Renard ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Optical Spectrum ◽  
Planar Technology ◽  
Spectrum Analyser ◽  
Optical Spectrum Analyser ◽  
Integrated Optical

Diffractive optical coupling element for surface plasmon resonance sensors

2004 ◽  
Vol 100 (3) ◽  
pp. 298-308 ◽  
Author(s):  
C THIRSTRUP ◽  
W ZONG ◽  
M BORRE ◽  
H NEFF ◽  
H PEDERSEN ◽  
...  
Keyword(s):  
Surface Plasmon Resonance ◽  
Surface Plasmon ◽  
Plasmon Resonance ◽  
Optical Coupling ◽  
Coupling Element ◽  
Surface Plasmon Resonance Sensors

GROWTH AND CHARACTERIZATION OF C-ORIENTED LiNbO3 THIN FILMS ON Si (100) BY PLD

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4343-4346 ◽  
Author(s):  
XINCHANG WANG ◽  
ZHIZHEN YE ◽  
JUNHUI HE ◽  
JINGYUN HUANG ◽  
BINGHUI ZHAO
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Silicon Substrate ◽  
Prism Coupler ◽  
Transmission Electron ◽  
Reflection Peak ◽  
Integrated Optical ◽  
Integrated Optical Devices

Lithium niobate ( LiNbO 3) thin film is an important material for optical waveguide. Recently, particular attention has been paid to the application of LiNbO 3 (LN) thin films. To develop and fabricate integrated optical devices, the growth of thin LN epitaxial films onto silicon substrate is of great importance and particularly attractive. In this paper, LN thin film was grown by pulsed laser deposition (PLD). Stoichiometric LN ceramic is used as a target. Amorphous SiO 2 buffer layer was coated on Si (100) wafer by in-situ themal oxidation before the deposition. The optimized condition of growing LN film on Si (100) by PLD is found: O 2 pressure 30 Pa, substrate temperature 600°C. Only (006) reflection of LN was observed besides the (002) reflection of silicon substrate from XRD pattern. The FWHM (~0.21°) of (006) reflection peak is much narrower than the value reported by Lee [1]. The results of XRD measurement indicate that the LN film was epitaxially grown along the c-axis. Transmission electron microcopy (TEM) patterns confirm that the film has superior crystalline quality. The optical waveguiding properties of the films were demonstrated by a prism coupler method. Fully c-oriented thin film could be grown on silicon substrate by PLD without the buffer layer and the induced electric field.

Ion Beam Sputter Deposition Of Ferroelectric Oxide Thin Films

1991 ◽  
Vol 223 ◽  
Author(s):  
Thomas M. Graettinger ◽  
O. Auciello ◽  
M. S. Ameen ◽  
H. N. Al-Shareef ◽  
K. Gifford ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Growth Parameters ◽  
Ion Beam ◽  
Lead Zirconate ◽  
Electro Optic ◽  
Integrated Optical ◽  
Pzt Films ◽  
Ion Beam Sputter Deposition ◽  
Ferroelectric Oxide

ABSTRACTFerroelectric oxide films have been studied for their potential application as integrated optical materials and nonvolatile memories. Electro-optic properties of potassium niobate (KNbO3) thin films have been measured and the results correlated to the microstructures observed. The growth parameters necessary to obtain single phase perovskite lead zirconate titanate (PZT) thin films are discussed. Hysteresis and fatigue measurements of the PZT films were performed to determine their characteristics for potential memory devices.

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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