Dynamic Memory Characteristics Of InGaAsP Photonic Switching Devices

1989 ◽  
Author(s):  
W. Kowalsky ◽  
J. Maehnss ◽  
K. J. Ebeling
1993 ◽  
Vol 02 (04) ◽  
pp. 551-558 ◽  
Author(s):  
CHUNFEI LI ◽  
MIAO YANG ◽  
FENGYUN GUO ◽  
YUXIAO WANG ◽  
KUNIO TADA

A new principle of all-optical switching devices based on the excited-state nonlinear absorption working at non-resonant frequency with small linear absorption are proposed. The theory and experimental studies using C60 material are presented in this paper.


Optics News ◽  
1989 ◽  
Vol 15 (2) ◽  
pp. 7 ◽  
Author(s):  
Yaron Silberberg

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