Spatial Light Modulators For Laser Beam Control

1989 ◽  
Author(s):  
John N. Lee
Author(s):  
Gang Xia ◽  
Wei Fan ◽  
Dajie Huang ◽  
He Cheng ◽  
Jiangtao Guo ◽  
...  

In order to improve the damage threshold and enlarge the aperture of a laser beam shaper, photolithographic patterning technology is adopted to design a new type of liquid crystal binary mask. The inherent conductive metal layer of commercial liquid crystal electro-optical spatial light modulators is replaced by azobenzene-based photoalignment layers patterned by noncontact photolithography. Using the azobenzene-based photoalignment layer, a liquid crystal binary mask for beam shaping is fabricated. In addition, the shaping ability, damage threshold, write/erase flexibility and stability of the liquid crystal binary mask are tested. Using a 1 Hz near-IR (1064 nm) laser, the multiple-shot nanosecond damage threshold of the liquid crystal mask is measured to be higher than $15~\text{J}/\text{cm}^{2}$. The damage threshold of the azobenzene-based photoalignment layer is higher than $50~\text{J}/\text{cm}^{2}$ under the same testing conditions.


2010 ◽  
Author(s):  
Michael F. Becker ◽  
Jinyang Liang ◽  
Rudolph N. Kohn, Jr. ◽  
Daniel J. Heinzen

2001 ◽  
Author(s):  
Sven Krueger ◽  
Guenther K. Wernicke ◽  
Hartmut Gruber ◽  
Nazif Demoli ◽  
Matthias Duerr ◽  
...  

Author(s):  
B. Loiseaux ◽  
J.-P. Huignard ◽  
J.-C. Chanteloup ◽  
B. Wattelier ◽  
A. Migus ◽  
...  

SPIE Newsroom ◽  
2013 ◽  
Author(s):  
Christian Schulze ◽  
Daniel Flamm ◽  
Michael Duparré ◽  
Andrew Forbes

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.


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