Fabrication Of Ti:LiNbO3 Optical Channel Waveguides Using A Rapid Thermal Annealing System

1988 ◽  
Author(s):  
Daryl C. Cromer ◽  
Gregory N. De Brabander ◽  
Joseph T. Boyd ◽  
Howard E. Jackson ◽  
S. Sriram
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Optical Channel ◽  
Channel Waveguides

Use of a rapid thermal annealing system to initiate indiffusion for fabrication of Ti:LiNbO_3 optical channel waveguides

1989 ◽  
Vol 28 (1) ◽  
pp. 33 ◽  
Author(s):  
Daryl C. Cromer ◽  
Gregory N. De Brabander ◽  
Joseph T. Boyd ◽  
Howard E. Jackson ◽  
S. Sriram
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Optical Channel ◽  
Channel Waveguides

Characterization of Ti:LiNbo3 Optical Channel Waveguides Fabricated using Rapid Thermal Annealing

1989 ◽  
Vol 152 ◽  
Author(s):  
Uma Ramabadran ◽  
Gregory N. De Brabander ◽  
Joseph T. Boyd ◽  
Howard E. Jackson ◽  
S. Sriram
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Optical Waveguides ◽  
Propagation Loss ◽  
Optical Channel ◽  
Preliminary Results ◽  
Raman Microprobe ◽  
Channel Waveguides ◽  
Raman Response

ABSTRACTRapid thermal annealing has been used to initiate diffusion of Ti in LiNbO3 for the fabrication of optical waveguides. The sample with the most rapid initial ramp of temperature to 875 C was found to have the lowest propagation loss of 1 dB/cm. In order to more fully understand these channel waveguides, we have utilized Raman microprobe spectroscopy. Preliminary results suggest that the presence of the Ti in the LiNbO3 lattice dramatically alters the Raman response.

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solar Cell Application
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