Simulation Of Electro-Optic Image Sensor Performance

1976 ◽  
Author(s):  
Richard J. Jones
Keyword(s):  
Image Sensor ◽  
Sensor Performance ◽  
Electro Optic ◽  
Optic Image

Influence of Transparent Electrodes on Image Sensor Performance

1985 ◽  
Vol 49 ◽  
Author(s):  
K. Kempter ◽  
H. Wieczrek ◽  
M. Hoheisel
Keyword(s):  
Response Times ◽  
Image Sensor ◽  
Image Sensors ◽  
Transparent Electrodes ◽  
Sensor Performance ◽  
Decay Times ◽  
Sensor Cell ◽  
Photocurrent Decay

AbstractThe short response times required for image sensors demand blocking contacts at the sensor cell. It was found that the junctions between transparent electrodes (ITO or a thin palladium film) and the metallic back electrode with a-Si:H form blocking contacts yielding photocurrent decay times of the order of some microseconds. The two different time regimes observed for the decay are interpreted as being limited by the drift and the release of holes respectively.

Degradation mechanism of star sensor performance caused by radiation damage of CMOS image sensor

2020 ◽  
Vol 49 (5) ◽  
pp. 20190555
Author(s):  
冯婕 Jie Feng ◽  
李豫东 Yudong Li ◽  
文林 Lin Wen ◽  
郭旗 Qi Guo
Keyword(s):  
Radiation Damage ◽  
Degradation Mechanism ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Star Sensor ◽  
Sensor Performance

Measurements of planar and depth dose distributions using a scintillating fiber-optic image sensor system for dosimetry in radiotherapeutic applications

2013 ◽  
Vol 20 (2) ◽  
pp. 178-181 ◽  
Author(s):  
Sang Hun Shin ◽  
Wook Jae Yoo ◽  
Jeong Ki Seo ◽  
Ki-Tek Han ◽  
Dayeong Jeon ◽  
...  
Keyword(s):  
Fiber Optic ◽  
Image Sensor ◽  
Sensor System ◽  
Dose Distributions ◽  
Depth Dose ◽  
Scintillating Fiber ◽  
Optic Image

High Fill Factor a-Si:H Sensor Arrays with Reduced Pixel Crosstalk

2008 ◽  
Vol 1066 ◽  
Author(s):  
Yuriy Vygranenko ◽  
A. Sazonov ◽  
D. Striakhilev ◽  
J. H. Chang ◽  
G. Heiler ◽  
...  
Keyword(s):  
Fill Factor ◽  
Sensor Arrays ◽  
Image Sensor ◽  
Low Noise ◽  
Active Matrix ◽  
Interlayer Dielectric ◽  
Sensor Performance ◽  
Data Line ◽  
High Fill Factor ◽  
Low K

ABSTRACTIn this paper, we report on low noise, high fill factor amorphous silicon (a-Si:H) image sensor structures for indirect radiography. Two types of the sensor arrays comprising n-i-p photodiodes and m-i-s photosensors have been fabricated. The device prototypes contain 100 × 100 pixels, with a pixel pitch of 139 μm. The active-matrix addressing is provided by low off-current TFTs. The sensors are vertically integrated onto the TFT-backplane, by implementing a 3-μm-thick low-k interlayer dielectric. This dielectric layer serves to reduce the data line capacitance and to planarize underlying topography. The detector was designed for reduced data-line resistance and parasitic coupling. Details of the device design and fabrication, along with sensor performance characteristics, are presented and discussed.

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