Radiation Effects Of Various Ion Beams On Resists Studied By Product Analysis And New Nanosecond Ion Beam Pulse Radiolysis

1989 ◽  
Author(s):  
Seiichi Tagawa ◽  
Noriyuki Kouchi ◽  
Hiromi Shibata ◽  
Yoneho Tabata
Keyword(s):  
Radiation Effects ◽  
Pulse Radiolysis ◽  
Ion Beam ◽  
Ion Beams ◽  
Product Analysis

Ion Beam Induced Modifications in Conducting Polymers

2013 ◽  
Vol 341 ◽  
pp. 69-105
Author(s):  
R.C. Ramola ◽  
Subhash Chandra
Keyword(s):  
Optical Properties ◽  
Conducting Polymers ◽  
Radiation Effects ◽  
Ion Beam ◽  
Polymeric Materials ◽  
High Energy ◽  
Ion Beams ◽  
Magnetic Storage ◽  
Structural And Optical Properties ◽  
The Impact

High energy ion beam induced modifications in polymeric materials is of great interest from the point of view of characterization and development of various structures and filters. Due to potential use of conducting polymers in light weight rechargeable batteries, magnetic storage media, optical computers, molecular electronics, biological and thermal sensors, the impact of swift heavy ions for the changes in electrical, structural and optical properties of polymers is desirable. The high energy ion beam irradiation of polymer is a sensitive technique to enhance its electrical conductivity, structural, mechanical and optical properties. Recent progress in the radiation effects of ion beams on conducting polymers are reviewed briefly. Our recent work on the radiation effects of ion beams on conductive polymers is described. The electrical, structural and optical properties of irradiated films were analyzed using V-I, X-Ray diffraction (XRD), scanning electron microscopy (SEM), UV-Visible spectroscopy and Fourier transform infrared spectroscopy methods.

scholarly journals Effects of Ion Beam Irradiation on NanoscaleInOxCooper-Pair Insulators

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Srdjan Milosavljević ◽  
Djordje Lazarević ◽  
Koviljka Stanković ◽  
Milić Pejović ◽  
Miloš Vujisić
Keyword(s):  
Radiation Effects ◽  
Cooper Pair ◽  
Ion Beam ◽  
Ion Beams ◽  
Metallic State ◽  
Cooper Pairs ◽  
Current Voltage ◽  
State Radiation ◽  
Radiation Induced ◽  
Induced Changes

This paper examines the effects of irradiating indium oxide films of nanoscale thickness by ion beams, when these films are in the Cooper-pair insulator state. Radiation effects are predicted on the basis of Monte Carlo simulations of ion transport. Results of numerical experiments are interpreted within the theoretical model of a Cooper-pair insulator. The study suggests that radiation-induced changes inInOxfilms exposed to ion beams could significantly alter their current-voltage characteristics and that a transition to a metallic state is possible, due to radiation-induced perturbation of the fine-tuned granular structure. Furthermore, incident and displaced ions can break up enough Cooper pairs inInOxfilms to cause dissolution of this specific insulating state.

Ion beam radiation effects on InAs semiconductor quantum dots

2000 ◽  
Vol 647 ◽  
Author(s):  
J. Zhu ◽  
M. Thaik ◽  
M. Yakimov ◽  
S. Oktyabrsky ◽  
A. E. Kaloyeros ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Radiation Effects ◽  
Ion Beam ◽  
Single Layer ◽  
Ion Beams ◽  
Beam Radiation ◽  
Gaas Films ◽  
Potential Applications ◽  
Self Assembled ◽  
Significant Attention

AbstractSelf-assembled quantum dots (QDs) have attracted significant attention because of their potential applications in novel semiconductor devices. In this work, we investigated radiation effects induced by 1.0 MeV proton ion beams on InAs self-assembled quantum dots. In particular, we emphasized the effects of lattice environments of QDs on their luminescence emission after ion beam irradiation. Photoluminescence (PL) spectroscopy was used to characterize the optical properties of QDs subjected to proton irradiation and post-irradiation annealing. Compared to the single-layer QDs grown in GaAs films, the QDs embedded in an AlAs/GaAs superlattice exhibited much higher PL degradation resistance to proton beam bombardment, e.g., at the highest dose (1.0×1014 cm−2) used in this work, a difference of ~ 20-fold in PL intensity was found between the QDs configured in these two different lattice structures. After thermal annealing of irradiated QD samples, ion beam enhanced blueshift of PL was observed to be much more pronounced for the single-layer QDs. We discuss mechanisms that may result in the differences in optical response to ion beams between QDs with different lattice surroundings.

Simulation of Ion Beam Irradiation Effects in Perovskite Oxide Memristors

2014 ◽  
Vol 906 ◽  
pp. 89-95
Author(s):  
Ivan Knežević ◽  
Marija Obrenović ◽  
Zoran Rajović ◽  
Bratislav Iričanin ◽  
Predrag Osmokrović
Keyword(s):  
Radiation Effects ◽  
Ion Beam ◽  
Absorbed Dose ◽  
Ion Beams ◽  
Perovskite Oxide ◽  
Ion Beam Irradiation ◽  
Oxygen Ion ◽  
Voltage Polarity ◽  
Layer Resistance ◽  
Ion Species

Radiation effects of ion beams in perovskite oxide memristors are analyzedand linked to absorbed dose values, calculated from simulations of ion transport. Several ion species were used in simulations, chosen to represent certain commonly encountered radiation environments. Results indicate that considerable formation of oxygen ion - oxygen vacancy pairs, as well as advent of displaced rare earth and alkaline atoms, is to be expected. Oxygen vacancies can lead to a decrease or increase of active layer resistance, depending on applied voltage polarity. The loss of vacancies from the device is bound to impair the performance of the memristor. Calculated absorbed dose values in the memristor for various incident ion beams are typically on the order of several kGy.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

scholarly journals Yttrium Oxide Freeze-Casts: Target Materials for Radioactive Ion Beams

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 2864
Author(s):  
Eva Kröll ◽  
Miriana Vadalà ◽  
Juliana Schell ◽  
Simon Stegemann ◽  
Jochen Ballof ◽  
...  
Keyword(s):  
Pore Structure ◽  
Yttrium Oxide ◽  
Ion Beam ◽  
Isotope Separation ◽  
Target Material ◽  
Ion Beams ◽  
Radioactive Isotopes ◽  
Solid Loading ◽  
Radioactive Ion Beams ◽  
Freeze Casting

Highly porous yttrium oxide is fabricated as ion beam target material in order to produce radioactive ion beams via the Isotope Separation On Line (ISOL) method. Freeze casting allows the formation of an aligned pore structure in these target materials to improve the isotope release. Aqueous suspensions containing a solid loading of 10, 15, and 20 vol% were solidified with a unidirectional freeze-casting setup. The pore size and pore structure of the yttrium oxide freeze-casts are highly affected by the amount of solid loading. The porosity ranges from 72 to 84% and the crosslinking between the aligned channels increases with increasing solid loading. Thermal aging of the final target materials shows that an operation temperature of 1400 °C for 96 h has no significant effect on the microstructure. Thermo-mechanical calculation results, based on a FLUKA simulation, are compared to measured compressive strength and forecast the mechanical integrity of the target materials during operation. Even though they were developed for the particular purpose of the production of short-lived radioactive isotopes, the yttria freeze-cast scaffolds can serve multiple other purposes, such as catalyst support frameworks or high-temperature fume filters.

scholarly journals Production of ion beams in high-power laser–plasma interactions and their applications

2004 ◽  
Vol 22 (1) ◽  
pp. 19-24 ◽  
Author(s):  
F. PEGORARO ◽  
S. ATZENI ◽  
M. BORGHESI ◽  
S. BULANOV ◽  
T. ESIRKEPOV ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Medical Physics ◽  
Ion Beam ◽  
Laser Pulses ◽  
Ion Beams ◽  
Laser Plasma Interactions ◽  
Physical Mechanisms ◽  
Short Laser Pulses ◽  
Laser Pulse Intensity ◽  
Target Design

Energetic ion beams are produced during the interaction of ultrahigh-intensity, short laser pulses with plasmas. These laser-produced ion beams have important applications ranging from the fast ignition of thermonuclear targets to proton imaging, deep proton lithography, medical physics, and injectors for conventional accelerators. Although the basic physical mechanisms of ion beam generation in the plasma produced by the laser pulse interaction with the target are common to all these applications, each application requires a specific optimization of the ion beam properties, that is, an appropriate choice of the target design and of the laser pulse intensity, shape, and duration.

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