High Purity Single Crystal Silicon Fibers For Near Infrared Applications

1989 ◽  
Author(s):  
A. Ray Hilton, Sr. ◽  
James McCord
Keyword(s):  
Single Crystal ◽  
High Purity ◽  
Near Infrared ◽  
Single Crystal Silicon ◽  
Crystal Silicon

scholarly journals More Than One Ever Wanted To Know About X-ray Detectors

1994 ◽  
Vol 2 (5) ◽  
pp. 8-8
Author(s):  
Mark W. Lund
Keyword(s):  
Electron Microscope ◽  
Electric Field ◽  
Single Crystal ◽  
Leakage Current ◽  
High Purity ◽  
Chemical Elements ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
X Ray ◽  
Impurity Atoms

A combination of electron microscope and x-ray spectrometer is a very powerful tool. Not only can one see a sample in great detail, but one can determine, and even map, the chemical elements. In Part 1, I discussed some of the basics of energy dispersive x-ray spectroscopy (EDS or EDX). The heart of the spectrometer is a small piece of single crystal silicon about the size and shape of a shirt button, and about twice as thick. It has been selected for high purity, and then lithium drifted to compensate the remaining impurities.The lithium is carefully drifted into the crystal button in order to exactly compensate the impurities in the crystal that would create leakage current. This is done at about 60° C under an electric field. It is then evaluated and re-drifted for a final clean up of any uncompensated impurity atoms that remain.

scholarly journals Research on Silicon Wafer Manufacturing Process and Physical Properties Testing Using High-Purity Polysilicon

2021 ◽  
Vol 2083 (2) ◽  
pp. 022050
Author(s):  
Xiaoming Hu
Keyword(s):  
Integrated Circuits ◽  
Single Crystal ◽  
Silicon Wafer ◽  
High Purity ◽  
Semiconductor Industry ◽  
Single Crystal Silicon ◽  
Process Technology ◽  
Crystal Silicon ◽  
Silicon Ingot ◽  
Correct Orientation

Abstract The shape of a bare wafer is round, so it is called a wafer or a silicon wafer. It is the basis for the production of silicon semiconductor integrated circuits. The silicon wafer is cut from a large piece of semiconductor material silicon ingot. The high-purity polysilicon (its purity is up to 99.999999999%) is into a large single crystal, given the correct orientation and an appropriate amount of N-type or P-type doping, a silicon ingot is obtained through five-step crystal growth. Wafers (wafers) are then made from silicon ingots by more than eight processes. This paper investigates the single crystal silicon growth and wafer preparation process technology, and finally discusses the evolution of wafer size growth and changes in the development of the semiconductor industry chain.

Nitridation of high-purity single-crystal silicon

Metallography ◽  
1982 ◽  
Vol 15 (2) ◽  
pp. 157-162 ◽  
Author(s):  
O.J. Gregory ◽  
M.H. Richman
Keyword(s):  
Single Crystal ◽  
High Purity ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Photoluminescence of a Single-Crystal Silicon Quantum Well

1994 ◽  
Vol 358 ◽  
Author(s):  
Peter N. Saeta ◽  
Alan C. Gallagher
Keyword(s):  
Quantum Well ◽  
Single Crystal ◽  
Layer Thickness ◽  
Near Infrared ◽  
Single Crystal Silicon ◽  
Surface States ◽  
Silicon On Insulator ◽  
Nonradiative Recombination ◽  
Photoluminescence Intensity ◽  
Crystal Silicon

ABSTRACTSingle crystal-silicon quantum well layers with SiO2 barriers were grown from silicon-on-insulator substrates. Photoluminescence in the red and near-infrared was observed for average layer thickness < 8 nm, with peak signal for 2-nm thickness. The luminescence spectrum was essentially independent of well width for SiO2 barriers, but the photoluminescence intensity decreased sharply after annealing in Ar. These results suggest the importance of radiation from surface states. In contrast to oxide-passivated silicon nanocrystals and to porous silicon, the room-temperature photoluminescence quantum efficiency is low (10-4-10-5), probably due to variations in layer thickness and to diffusion of photoexcited carriers to fast nonradiative recombination centers.

EIS Characterization of Ultra High Purity, Float Zone Single Crystal Silicon

2019 ◽  
Vol 16 (6) ◽  
pp. 331-342 ◽  
Author(s):  
Petr Viscor ◽  
Ole Andersen ◽  
Thomas Clausen ◽  
Paul A. Ellsmore ◽  
Leif Jensen ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Purity ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Float Zone ◽  
Ultra High Purity

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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