Metal Surface Treatments By Means Of High Energy U.V. Laser Pulses

Author(s):  
S. Tosto ◽  
P. Di Lazzaro ◽  
T. Letardi ◽  
S. Martelli
2012 ◽  
Vol 31 (1) ◽  
pp. 23-28 ◽  
Author(s):  
V.V. Korobkin ◽  
M.Yu. Romanovskiy ◽  
V.A. Trofimov ◽  
O.B. Shiryaev

AbstractA new concept of generating tight bunches of electrons accelerated to high energies is proposed. The electrons are born via ionization of a low-density neutral gas by laser radiation, and the concept is based on the electrons acceleration in traps arising within the pattern of interference of several relativistically intense laser pulses with amplitude fronts tilted relative to their phase fronts. The traps move with the speed of light and (1) collect electrons; (2) compress them to extremely high density in all dimensions, forming electron bunches; and (3) accelerate the resulting bunches to energies of at least several GeV per electron. The simulations of bunch formation employ the Newton equation with the corresponding Lorentz force.


2017 ◽  
Vol 88 (5) ◽  
pp. 053501 ◽  
Author(s):  
M. A. Beckwith ◽  
S. Jiang ◽  
A. Schropp ◽  
A. Fernandez-Pañella ◽  
H. G. Rinderknecht ◽  
...  

2013 ◽  
Vol 41 (10) ◽  
pp. 846
Author(s):  
Daisuke KOSHIMIZU ◽  
Keiichi OMATA ◽  
Hiroshi KUSANO ◽  
Seijirou SOEDA ◽  
Tadahiko INOHARA ◽  
...  

2000 ◽  
Vol 34 (4-6) ◽  
pp. 273-288 ◽  
Author(s):  
A. Kuhn ◽  
I.J. Blewett ◽  
D.P. Hand ◽  
P. French ◽  
M. Richmond ◽  
...  

1984 ◽  
Vol 35 ◽  
Author(s):  
J.Z. Tischler ◽  
B.C. Larson ◽  
D.M. Mills

ABSTRACTSynchrotron x-ray pulses from the Cornell High Energy Synchrotron Source (CHESS) have been used to carry out nanosecond resolution measurements of the temperature distrubutions in Ge during UV pulsed-laser irradiation. KrF (249 nm) laser pulses of 25 ns FWHM with an energy density of 0.6 J/cm2 were used. The temperatures were determined from x-ray Bragg profile measurements of thermal expansion induced strain on <111> oriented Ge. The data indicate the presence of a liquid-solid interface near the melting point, and large (1500-4500°C/pm) temperature gradients in the solid; these Ge results are analagous to previous ones for Si. The measured temperature distributions are compared with those obtained from heat flow calculations, and the overheating and undercooling of the interface relative to the equilibrium melting point are discussed.


2000 ◽  
Vol 39 (33) ◽  
pp. 6136 ◽  
Author(s):  
Andreas Kuhn ◽  
Paul French ◽  
Duncan P. Hand ◽  
Ian J. Blewett ◽  
Mark Richmond ◽  
...  

2012 ◽  
Vol 285 (10-11) ◽  
pp. 2715-2718 ◽  
Author(s):  
Chi Zhang ◽  
Yu-ying Zhang ◽  
Ming-lie Hu ◽  
Si-jia Wang ◽  
You-jian Song ◽  
...  

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