CW Spectroscopy Of Ultrafast Relaxation In Semiconductor Heterostructures

Author(s):  
S. A. Lyon ◽  
C. L. Petersen
Author(s):  
E.G. Bithell ◽  
W.M. Stobbs

It is well known that the microstructural consequences of the ion implantation of semiconductor heterostructures can be severe: amorphisation of the damaged region is possible, and layer intermixing can result both from the original damage process and from the enhancement of the diffusion coefficients for the constituents of the original composition profile. A very large number of variables are involved (the atomic mass of the target, the mass and energy of the implant species, the flux and the total dose, the substrate temperature etc.) so that experimental data are needed despite the existence of relatively well developed models for the implantation process. A major difficulty is that conventional techniques (e.g. electron energy loss spectroscopy) have inadequate resolution for the quantification of any changes in the composition profile of fine scale multilayers. However we have demonstrated that the measurement of 002 dark field intensities in transmission electron microscope images of GaAs / AlxGa1_xAs heterostructures can allow the measurement of the local Al / Ga ratio.


2003 ◽  
Vol 771 ◽  
Author(s):  
C. Gadermaier ◽  
G. Cerullo ◽  
C. Manzoni ◽  
U. Scherf ◽  
E.J.W. List ◽  
...  

AbstractIn a novel modification of transient differential transmission spectroscopy, the first excited state S1 is reexcited via a second laser pulse towards a higher lying state Sn. The dynamics of the relaxation of this state Sn as well as the states created from Sn are revealed by a broad-band probe pulse.We find that the charge carrier generation efficiency from Sn is higher compared to S1. The push and probe durations below 20 fs enable the temporal resolution of the ultrafast relaxation of the Sn state and enables us to identify the two main contributions to enhanced charge generation from Sn, energy migration towards sites of high dissociation probability, and exciton dissociation during vibrational relaxation.


1990 ◽  
Author(s):  
Mark I. Stockman ◽  
Lakshmi N. Pandey ◽  
Thomas F. George

2021 ◽  
Vol 154 (8) ◽  
pp. 084201
Author(s):  
Elisa Fresch ◽  
Nicola Peruffo ◽  
Mariachiara Trapani ◽  
Massimiliano Cordaro ◽  
Giovanni Bella ◽  
...  

2021 ◽  
Vol 129 (2) ◽  
pp. 025301
Author(s):  
Vitaly S. Proshchenko ◽  
Manoj Settipalli ◽  
Artem K. Pimachev ◽  
Sanghamitra Neogi

2017 ◽  
Vol 701 ◽  
pp. 16-22 ◽  
Author(s):  
Xiangchao Zhang ◽  
Aidong Tang ◽  
Yanrong Jia ◽  
Yutang Wang ◽  
Hongxia Wang ◽  
...  

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