Progress In Single Quantum Well Structures For High Power Laser Device Applications

1988 ◽  
Author(s):  
R G. Waters ◽  
P L. Tihanyi ◽  
D S. Hill ◽  
B A. Soltz
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Single Quantum ◽  
High Power Laser ◽  
Laser Device ◽  
Power Laser ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Device Applications

Operating characteristics of Al-free InGaAsP/GaAs single quantum well high-power laser

1996 ◽  
Author(s):  
Lijun Wang ◽  
Sheng Li Wu ◽  
Jacqueline E. Diaz ◽  
Ivan Eliashevich ◽  
Hyuk J. Yi ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Single Quantum ◽  
High Power Laser ◽  
Operating Characteristics ◽  
Power Laser ◽  
Single Quantum Well

scholarly journals Tomographic Characterization of Dislocations in Failure Regions of Broad Area InGaAs/AlGaAs Strained Layer Single Quantum Well High Power Laser Diodes

2009 ◽  
Vol 15 (S2) ◽  
pp. 598-599
Author(s):  
B Foran ◽  
N Ives ◽  
T Yeoh ◽  
M Brodie ◽  
Y Sin ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Laser Diodes ◽  
Single Quantum ◽  
High Power Laser ◽  
Power Laser ◽  
Broad Area ◽  
Single Quantum Well ◽  
Strained Layer

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Optical properties of GaBiAs single quantum well structures grown by MBE

2015 ◽  
Vol 30 (9) ◽  
pp. 094016 ◽  
Author(s):  
O Donmez ◽  
A Erol ◽  
M C Arikan ◽  
H Makhloufi ◽  
A Arnoult ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Insitupatterning and overgrowth for the formation of buried GaAs/AlGaAs single quantum‐well structures

1992 ◽  
Vol 60 (3) ◽  
pp. 365-367 ◽  
Author(s):  
H. Kawanishi ◽  
Y. Sugimoto ◽  
T. Ishikawa ◽  
H. Hidaka
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

Infrared absorption in HgCdTe/CdTe single quantum well structures

1993 ◽  
Vol 8 (1S) ◽  
pp. S296-S299 ◽  
Author(s):  
R Sizmann ◽  
P Helgesen ◽  
H Steen ◽  
T Skauli ◽  
T Colin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Absorption ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures
Sign in / Sign up

Export Citation Format

Share Document