Fourier Transform Photoluminescence Analysis Of Semiconductor Materials

1988 ◽  
Author(s):  
W. M. Duncan ◽  
M. L. Eastwood
Keyword(s):  
Fourier Transform ◽  
Semiconductor Materials

Cathodoluminescence of Catalyst Crystallites

1982 ◽  
Vol 40 ◽  
pp. 664-665
Author(s):  
E.D. Boyes ◽  
P.L. Gai ◽  
D.B. Darby ◽  
C. Warwick
Keyword(s):  
Defect Density ◽  
Chemical Properties ◽  
Operating Conditions ◽  
Semiconductor Materials ◽  
Environmental Cell ◽  
High Resolution Structure ◽  
Commercially Important ◽  
Crystallographic Defects ◽  
Resolution Structure

The extended crystallographic defects introduced into some oxide catalysts under operating conditions may be a consequence and accommodation of the changes produced by the catalytic activity, rather than always being the origin of the reactivity. Operation without such defects has been established for the commercially important tellurium molybdate system. in addition it is clear that the point defect density and the electronic structure can both have a significant influence on the chemical properties and hence on the effectiveness (activity and selectivity) of the material as a catalyst. SEM/probe techniques more commonly applied to semiconductor materials, have been investigated to supplement the information obtained from in-situ environmental cell HVEM, ultra-high resolution structure imaging and more conventional AEM and EPMA chemical microanalysis.

Comparison of Calculated and Recorded Electron Energy-Loss Spectra of Aluminium and Carbon

1990 ◽  
Vol 48 (2) ◽  
pp. 64-65
Author(s):  
L. Reimer ◽  
R. Oelgeklaus
Keyword(s):  
Fourier Transform ◽  
Energy Loss ◽  
Electron Energy ◽  
Rotational Symmetry ◽  
Mean Free Path ◽  
Single Scattering ◽  
Specimen Thickness ◽  
Two Dimensional ◽  
Image Position ◽  
Electron Energy Loss

Quantitative electron energy-loss spectroscopy (EELS) needs a correction for the limited collection aperture α and a deconvolution of recorded spectra for eliminating the influence of multiple inelastic scattering. Reversely, it is of interest to calculate the influence of multiple scattering on EELS. The distribution f(w,θ,z) of scattered electrons as a function of energy loss w, scattering angle θ and reduced specimen thickness z=t/Λ (Λ=total mean-free-path) can either be recorded by angular-resolved EELS or calculated by a convolution of a normalized single-scattering function ϕ(w,θ). For rotational symmetry in angle (amorphous or polycrystalline specimens) this can be realised by the following sequence of operations :(1)where the two-dimensional distribution in angle is reduced to a one-dimensional function by a projection P, T is a two-dimensional Fourier transform in angle θ and energy loss w and the exponent -1 indicates a deprojection and inverse Fourier transform, respectively.

FR-IR Molecular Microanalysis System

1990 ◽  
Vol 48 (2) ◽  
pp. 270-271
Author(s):  
John A. Reffner ◽  
William T. Wihlborg
Keyword(s):  
Fourier Transform ◽  
Fourier Transform Infrared ◽  
Integrated System ◽  
Morphological Examination ◽  
Fully Integrated ◽  
Ir Microscopy ◽  
Normal Functions ◽  
Infrared Microspectroscopy ◽  
Infrared Spectral ◽  
Ft Ir

The IRμs™ is the first fully integrated system for Fourier transform infrared (FT-IR) microscopy. FT-IR microscopy combines light microscopy for morphological examination with infrared spectroscopy for chemical identification of microscopic samples or domains. Because the IRμs system is a new tool for molecular microanalysis, its optical, mechanical and system design are described to illustrate the state of development of molecular microanalysis. Applications of infrared microspectroscopy are reviewed by Messerschmidt and Harthcock.Infrared spectral analysis of microscopic samples is not a new idea, it dates back to 1949, with the first commercial instrument being offered by Perkin-Elmer Co. Inc. in 1953. These early efforts showed promise but failed the test of practically. It was not until the advances in computer science were applied did infrared microspectroscopy emerge as a useful technique. Microscopes designed as accessories for Fourier transform infrared spectrometers have been commercially available since 1983. These accessory microscopes provide the best means for analytical spectroscopists to analyze microscopic samples, while not interfering with the FT-IR spectrometer’s normal functions.

The extended Fourier algorithm: Application in discrete optics and electron holography

1994 ◽  
Vol 52 ◽  
pp. 918-919
Author(s):  
E. Voelkl ◽  
L. F. Allard
Keyword(s):  
Fourier Transform ◽  
Fourier Transforms ◽  
Sampling Rate ◽  
Electron Holography ◽  
Optical Bench ◽  
Fourier Space ◽  
Ccd Cameras ◽  
Simulated Image ◽  
Initial Sampling ◽  
Fourier Algorithm

The conventional discrete Fourier transform can be extended to a discrete Extended Fourier transform (EFT). The EFT allows to work with discrete data in close analogy to the optical bench, where continuous data are processed. The EFT includes a capability to increase or decrease the resolution in Fourier space (thus the argument that CCD cameras with a higher number of pixels to increase the resolution in Fourier space is no longer valid). Fourier transforms may also be shifted with arbitrary increments, which is important in electron holography. Still, the analogy between the optical bench and discrete optics on a computer is limited by the Nyquist limit. In this abstract we discuss the capability with the EFT to change the initial sampling rate si of a recorded or simulated image to any other(final) sampling rate sf.

Fourier transform infrared spectrum of 13C32S2 in the 3v3 band region

1996 ◽  
Vol 89 (4) ◽  
pp. 1145-1155
Author(s):  
JACQUES WALRAND ◽  
GHISLAIN BLANQUET ◽  
JEAN-FRANCOIS BLAVIER ◽  
HARALD BREDOHL ◽  
IWAN DUBOIS
Keyword(s):  
Fourier Transform ◽  
Infrared Spectrum ◽  
Fourier Transform Infrared ◽  
Band Region
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