Anisotropic Plasma Etching Of Polysilicon With 100:1 Selectivity Over Thermal Oxide

1984 ◽  
Author(s):  
D.Bhogeswara Rao
Author(s):  
Vinod Narang ◽  
P. Muthu ◽  
J.M. Chin ◽  
Vanissa Lim

Abstract Implant related issues are hard to detect with conventional techniques for advanced devices manufactured with deep sub-micron technology. This has led to introduction of site-specific analysis techniques. This paper presents the scanning capacitance microscopy (SCM) technique developed from backside of SOI devices for packaged products. The challenge from backside method includes sample preparation methodology to obtain a thin oxide layer of high quality, SCM parameters optimization and data interpretation. Optimization of plasma etching of buried oxide followed by a new method of growing thin oxide using UV/ozone is also presented. This oxidation method overcomes the limitations imposed due to packaged unit not being able to heat to high temperature for growing thermal oxide. Backside SCM successfully profiled both the n and p type dopants in both cache and core transistors.


Langmuir ◽  
2014 ◽  
Vol 30 (41) ◽  
pp. 12354-12361 ◽  
Author(s):  
Eser M. Akinoglu ◽  
Anthony J. Morfa ◽  
Michael Giersig

1980 ◽  
Vol 17 (3) ◽  
pp. 721-730 ◽  
Author(s):  
C. J. Mogab ◽  
H. J. Levinstein

2009 ◽  
Author(s):  
Seok Hwan Lee ◽  
Chul-Jin Kim ◽  
Hyun-Woo Hwang ◽  
Sung-Joo Kim ◽  
Hyun-Seok Yang ◽  
...  

2011 ◽  
Vol 21 (6) ◽  
pp. 067003 ◽  
Author(s):  
Vladimir Bliznetsov ◽  
Anbumalar Manickam ◽  
Junwei Chen ◽  
Nagarajan Ranganathan

1998 ◽  
Author(s):  
Tam Pandhumsoporn ◽  
Lei Wang ◽  
Michael Feldbaum ◽  
Prashant Gadgil ◽  
Michel Puech ◽  
...  

2000 ◽  
Vol 18 (2) ◽  
pp. 385-387 ◽  
Author(s):  
B. Schüppert ◽  
E. Brose ◽  
K. Petermann ◽  
R. Moosburger

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