Self-Aligned-Gate Digital AlGaAs/GaAs Modulation-Doped Field Effect Transistor (MODFET) Processing And Short Channel Effects

1987 ◽  
Author(s):  
A. N. Lepore ◽  
D. C. Radulescu ◽  
w. J. Schaff ◽  
P. J. Tasker ◽  
L. F. Eastman
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Effect Transistor

Performance Evaluation of Silicon-Transition Metal Dichalcogenides Heterostructure Based Steep Subthreshold Slope-Field Effect Transistor Using Non-Equilibrium Green’s Function

2020 ◽  
Vol 18 (6) ◽  
pp. 468-476
Author(s):  
Prateek Kumar ◽  
Maneesha Gupta ◽  
Naveen Kumar ◽  
Marlon D. Cruz ◽  
Hemant Singh ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Molybdenum Disulphide ◽  
Short Channel ◽  
Tungsten Disulphide ◽  
Channel Effects ◽  
Effect Transistor

With technology invading nanometer regime performance of the Metal-Oxide-semiconductor Field Effect Transistor is largely hampered by short channel effects. Most of the simulation tools available do not include short channel effects and quantum effects in the analysis which raises doubt on their authenticity. Although researchers have tried to provide an alternative in the form of tunnel field-effect transistors, junction-less transistors, etc. but they all suffer from their own set of problems. Therefore, Metal-Oxide-Semiconductor Field-Effect Transistor remains the backbone of the VLSI industry. This work is dedicated to the design and study of the novel tub-type Metal-Oxide-Semiconductor Field-Effect Transistor. For simulation Non-Equilibrium Green’s Function is used as the primary model of simulation. The device is analyzed under different physical variations like work function, permittivity, and interface trap charge. This work uses Silicon-Molybdenum Disulphide heterojunction and Silicon-Tungsten Disulphide heterojunction as channel material. Results for both the heterojunctions are compared. It was analyzed that Silicon-Molybdenum Disulphide heterojunction provides better linearity and Silicon-Tungsten Disulphide heterojunction provides better switching speed than conventional Metal-Oxide-Semiconductor Field-Effect Transistor.

scholarly journals A Literature Survey on Tunnel Field Effect Transistors

2021 ◽  
Author(s):  
Soumya Sen ◽  
Ashish Raman ◽  
Mamta Khosla
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Tunneling Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Vast Number ◽  
Different Types ◽  
Channel Effects ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

TFET or Tunnel Field Effect Transistor in recent times has been the center of attraction of vast number of researcher’s despite of having minute subthreshold slope and excessive Ion/Ioff ratio. It is known that TFETs are much more immune to short-channel effects and fluctuations of random dopants in comparison to their MOSFET counterparts. TFETs are actually gated p-i-n diodes having tunneling current flowing between source and channel bands. In this paper deep rooted literature review has been done scanning each and every aspects of TFET including the variations of performance with different parameters. The paper finally gives a picture on the recent progress of TFET in different aspects such as from subthreshold swing to a significantly lower leakage current and high on current .For the simulation curves Nanohub.org was used as a tool. Lastly different types of TFET in respect of doping to symmetry and also gates are compared.

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