Non-Destructive Characterization Of Carrier Concentration And Thickness Uniformity For Semiconductors Using Infrared Reflectance Spectroscopy

Author(s):  
D. K. Gaskill ◽  
J. Davis ◽  
R. S. Sillmon ◽  
M. Sydor
2004 ◽  
Vol 43 (8A) ◽  
pp. 5151-5156 ◽  
Author(s):  
Katsutoshi Narita ◽  
Yasuto Hijikata ◽  
Hiroyuki Yaguchi ◽  
Sadafumi Yoshida ◽  
Shinichi Nakashima

1984 ◽  
Vol 44 ◽  
Author(s):  
Lauren A. Zellmer ◽  
William B. White

AbstractThe reaction between aqueous solutions and borosilicate glasses designed for commercial or defense waste immobilization produces a hydrated layer on the surface of the glass which can be characterized by infrared reflectance spectroscopy. Specular reflectance curves, obtained by Fourier transform infrared spectroscopy, can be deconvoluted by Kramers-Kronig analysis to obtain true absorption spectra. The pattern of Si-O stretching modes changes for alkali silicate glass, indicating changes in the network polymerization. The characteristic intense band of the borosilicate glasses simply changes intensity in a way that scales with degree of hydration. The progressive hydration of the glass surface also appears as a broad OH band which can be extracted from the reflectance curve by the deconvolution process.


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