Picosecond Characterization Of Semiconductor Lasers

1987 ◽  
Author(s):  
A. P. DeFonzo
Keyword(s):  
Semiconductor Lasers

Characterization of All-Optical Clock Recovery for 40 Gb/s RZ-OOK and RZ-DPSK Data Using Mode-Locked Semiconductor Lasers

2009 ◽  
Vol 27 (20) ◽  
pp. 4603-4609 ◽  
Author(s):  
Xuefeng Tang ◽  
F. van Dijk ◽  
J.C. Cartledge ◽  
A. Shen ◽  
A. Akrout ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Optical Clock ◽  
Clock Recovery ◽  
All Optical ◽  
Optical Clock Recovery

Characterization of Sputter Deposited PbTe on Si (111) for Optoelectronic Applications

2002 ◽  
Vol 744 ◽  
Author(s):  
Alexey Jdanov ◽  
Zinovi Dashevsky ◽  
Joshua Pelleg ◽  
Roni Shneck
Keyword(s):  
Semiconductor Lasers ◽  
Infrared Detectors ◽  
Far Infrared ◽  
Compound Semiconductors ◽  
Infrared Region ◽  
Ir Detectors ◽  
Absorption Region ◽  
Single Target ◽  
Sputter Deposited

ABSTRACTIV-VI compound semiconductors are of interest due to their potential application as thermoelectric material, infrared detectors and semiconductor lasers. The use of PbTe based semiconductors is usually in the middle and far infrared region. Magnetron sputtering of PbTe thin films from a single target on Si (111) was performed under various conditions. Characterization of the films shows that PbTe films on Si (111) substrate are suitable for preparation of infrared (IR) detectors. By heat treatment novel IR detectors can be developed in the electron absorption region of 4 – 10 μm.

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