Semiconductor Light Sources Fabricated By Vapor Phase Epitaxial Regrowth

1987 ◽  
Author(s):  
W. Powazinik ◽  
R. Olshansky ◽  
E. Meland ◽  
R. B. Lauer
Keyword(s):  
Vapor Phase ◽  
Light Sources ◽  
Epitaxial Regrowth

Channelled‐substrate buried heterostructure InGaAsP/InP lasers with vapor phase epitaxial base structure and liquid phase epitaxial regrowth

1984 ◽  
Vol 56 (3) ◽  
pp. 710-712 ◽  
Author(s):  
D. P. Wilt ◽  
R. F. Karlicek ◽  
K. E. Strege ◽  
W. C. Dautremont‐Smith ◽  
N. K. Dutta ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Vapor Phase ◽  
Liquid Phase Epitaxial ◽  
Epitaxial Regrowth ◽  
Buried Heterostructure ◽  
Base Structure

Multiple-Quantum-Wire Structures with Good Size Uniformity Fabricated by CH4/H2Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth

2003 ◽  
Vol 42 (Part 1, No. 6A) ◽  
pp. 3471-3472 ◽  
Author(s):  
Takuya Sano ◽  
Hideki Yagi ◽  
Kengo Muranushi ◽  
Shigeo Tamura ◽  
Takeo Maruyama ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Quantum Wire ◽  
Multiple Quantum ◽  
Epitaxial Regrowth ◽  
Size Uniformity

Trench-Confined InP-Based Epitaxial Regrowth Using Metal-Organic Vapor-Phase Epitaxy

2018 ◽  
Vol 215 (8) ◽  
pp. 1700454
Author(s):  
Carl Reuterskiöld Hedlund ◽  
Olof Öberg ◽  
Jang-Kwon Lim ◽  
Qin Wang ◽  
Michael Salter ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Epitaxial Regrowth ◽  
Metal Organic

GaInAsP/InP Strain-Compensated Quantum-Wire Lasers Fabricated by CH4/H2 Dry Etching and Organometallic Vapor-Phase-Epitaxial Regrowth

2002 ◽  
Vol 41 (Part 2, No. 2B) ◽  
pp. L186-L189 ◽  
Author(s):  
Hideki Yagi ◽  
Kengo Muranushi ◽  
Nobuhiro Nunoya ◽  
Takuya Sano ◽  
Shigeo Tamura ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Quantum Wire ◽  
Dry Etching ◽  
Epitaxial Regrowth

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

Spatially Resolved Photoelectron Spectroscopy: Recent Progress and Future Plans

1990 ◽  
Vol 48 (2) ◽  
pp. 388-389
Author(s):  
A. M. Bradshaw
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Reactivity ◽  
Target Material ◽  
Orbital Energy ◽  
Light Sources ◽  
Analytical Technique ◽  
Hartree Fock ◽  
Spatially Resolved ◽  
Koopmans Theorem ◽  
Surface Analytical Technique

X-ray photoelectron spectroscopy (XPS or ESCA) was not developed by Siegbahn and co-workers as a surface analytical technique, but rather as a general probe of electronic structure and chemical reactivity. The method is based on the phenomenon of photoionisation: The absorption of monochromatic radiation in the target material (free atoms, molecules, solids or liquids) causes electrons to be injected into the vacuum continuum. Pseudo-monochromatic laboratory light sources (e.g. AlKα) have mostly been used hitherto for this excitation; in recent years synchrotron radiation has become increasingly important. A kinetic energy analysis of the so-called photoelectrons gives rise to a spectrum which consists of a series of lines corresponding to each discrete core and valence level of the system. The measured binding energy, EB, given by EB = hv−EK, where EK is the kineticenergy relative to the vacuum level, may be equated with the orbital energy derived from a Hartree-Fock SCF calculation of the system under consideration (Koopmans theorem).

Tandem scanning confocal light microscopy as compared with x-ray diffraction for characterizing the behavior of clays in fluid-saturated petroleum reservoir rock

1989 ◽  
Vol 47 ◽  
pp. 148-149
Author(s):  
C.J. Stuart ◽  
B.E. Viani ◽  
J. Walker ◽  
T.H. Levesque
Keyword(s):  
Light Microscopy ◽  
Image Plane ◽  
Reservoir Rock ◽  
Depth Of Field ◽  
Objective Lens ◽  
Scanning System ◽  
Light Sources ◽  
Petroleum Reservoir ◽  
Image Recording ◽  
Scan Speed

Many techniques of imaging used to characterize petroleum reservoir rocks are applied to dehydrated specimens. In order to directly study behavior of fines in reservoir rock at conditions similar to those found in-situ these materials need to be characterized in a fluid saturated state.Standard light microscopy can be used on wet specimens but depth of field and focus cannot be obtained; by using the Tandem Scanning Confocal Microscope (TSM) images can be produced from thin focused layers with high contrast and resolution. Optical sectioning and extended focus images are then produced with the microscope. The TSM uses reflected light, bulk specimens, and wet samples as opposed to thin section analysis used in standard light microscopy. The TSM also has additional advantages: the high scan speed, the ability to use a variety of light sources to produce real color images, and the simple, small size scanning system. The TSM has frame rates in excess of normal TV rates with many more lines of resolution. This is accomplished by incorporating a method of parallel image scanning and detection. The parallel scanning in the TSM is accomplished by means of multiple apertures in a disk which is positioned in the intermediate image plane of the objective lens. Thousands of apertures are distributed in an annulus, so that as the disk is spun, the specimen is illuminated simultaneously by a large number of scanning beams with uniform illumination. The high frame speeds greatly simplify the task of image recording since any of the normally used devices such as photographic cameras, normal or low light TV cameras, VCR or optical disks can be used without modification. Any frame store device compatible with a standard TV camera may be used to digitize TSM images.

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