Determination Of Optical Constants From Photometric Measurements

1983 ◽  
Author(s):  
T. S. Eriksson ◽  
A. Hjortsberg
Keyword(s):  
Optical Constants ◽  
Photometric Measurements

Determination of optical constants from photometric measurements

1984 ◽  
Vol 11 (3) ◽  
pp. 141-148 ◽  
Author(s):  
T.S. Eriksson ◽  
A. Hjortsberg
Keyword(s):  
Optical Constants ◽  
Photometric Measurements

Cermets de Cu-PbI2 en couches minces: fabrication et détermination des constantes optiques

1983 ◽  
Vol 61 (4) ◽  
pp. 612-616 ◽  
Author(s):  
Jean-Marc Theriault ◽  
Germain Boivin
Keyword(s):  
Mass Concentration ◽  
Optical Constants ◽  
Evaporation Rate ◽  
Vacuum Evaporation ◽  
Index Of Refraction ◽  
Homogeneous Mixture ◽  
Lead Iodide ◽  
Low Concentration ◽  
Photometric Measurements

In this paper, we describe a method of fabrication of metal–dielectric mixtures (cermets) deposited by vacuum evaporation. Our study is mainly concerned with co-evaporated mixtures of copper and lead iodide. The stabilization of the evaporation rate of copper and lead iodide enables us to obtain a homogeneous mixture of these twø materials whose mass concentration C is determined from a previous calibration. Photometric measurements carried out on these films lead to the determination of the optical constants N (the index of refraction) and K (the coefficient of absorption). We present here the results obtained for mixtures of low concentration in copper. These results are compared with those obtained from the Maxwell–Garnett theory.

scholarly journals Determination of the Thickness and Optical Constants of ZrO2 by Spectroscopic Ellipsometry and Spectrophotometric Method

2011 ◽  
Vol 8 ◽  
pp. 223-227 ◽  
Author(s):  
R. Yusoh ◽  
M. Horprathum ◽  
P. Eiamchai ◽  
S. Chanyawadee ◽  
K. Aiempanakit
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Spectrophotometric Method ◽  
Optical Constants

Determination of optical constants and thicknesses of In2O3:Sn films from transmittance data

2007 ◽  
Vol 515 (18) ◽  
pp. 7387-7392 ◽  
Author(s):  
Fachun Lai ◽  
Limei Lin ◽  
Rongquan Gai ◽  
Yongzhong Lin ◽  
Zhigao Huang
Keyword(s):  
Optical Constants

Real-Time Analysis Of In-Situ Spectroscopic Ellipsometric Data During Mbe Growth Of III-V Semiconductors

1991 ◽  
Vol 222 ◽  
Author(s):  
B. Johs ◽  
J. L. Edwards ◽  
K. T. Shiralagi ◽  
R. Droopad ◽  
K. Y. Choi ◽  
...  
Keyword(s):  
Real Time ◽  
Optical Constants ◽  
Growth Parameters ◽  
Ex Situ ◽  
Time Analysis ◽  
Mbe Growth ◽  
In Situ Data ◽  
Real Time Analysis

ABSTRACTA modular spectroscopic ellipsometer, capable of both in-situ and ex-situ operation, has been used to measure important growth parameters of GaAs/AIGaAs structures. The ex-situ measurements provided layer thicknesses and compositions of the grown structures. In-situ ellipsometric measurements allowed the determination of growth rates, layer thicknesses, and high temperature optical constants. By performing a regression analysis of the in-situ data in real-time, the thickness and composition of an AIGaAs layer were extracted during the MBE growth of the structure.

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