Fiber Optical Triggering Of A High Power Thyristor Switch

Author(s):  
J. Marquez ◽  
J. P. Ulmet ◽  
J. Leotin
1997 ◽  
Vol 483 ◽  
Author(s):  
Z. Z. Bandić ◽  
E.C. Piquette ◽  
P.M. Bridger ◽  
T.F. Kuech ◽  
T. C. Mcgill

AbstractWe modeled the breakdown voltage, critical current density and maximum operating frequency of several GaN and GaN/AlN based high power and high temperature electronic devices. Important model parameters which influence device design and performance are minority carrier recombination lifetime and critical field for electric breakdown.GaN Schottky devices have been fabricated in the planar geometry. Current-voltage measurements indicated the importance of the vertical geometry for achieving large breakdown voltages. The minority carrier (hole) recombination lifetimes have been measured by electron beam induced currents (EBIC). The measured hole lifetime of 7 ns and estimate for the critical field indicate the possibility of GaN/AlGaN thyristor switch devices operating at 5KV with current densities approximately equal to 200 A/cm2 and at frequencies above 2MHz.The GaN structural and optical materials quality and processing requirement for etching is discussed.


2011 ◽  
Vol 23 (4) ◽  
pp. 939-942
Author(s):  
赵兴海 Zhao Xinghai ◽  
杨波 Yang Bo ◽  
单光存 Shan Guangcun ◽  
高杨 Gao Yang ◽  
杨晴 Yang Qing ◽  
...  

2003 ◽  
Author(s):  
Jing Liu ◽  
Lawrence Fan ◽  
Don L. DeVoe

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