GeO2-Sb2O3 Glass Optical Fibers For 2 To 3 µm Fabricated By Vapor-Phase Axial Deposition (VAD) Method

1982 ◽  
Author(s):  
H. Takahashi ◽  
I. Sugimoto ◽  
T. Sato ◽  
S. Yoshida
Keyword(s):  
Optical Fibers ◽  
Vapor Phase

Vapor Phase Doping of Rare-Earth in Optical Fibers for High Power Laser

2014 ◽  
Vol 26 (1) ◽  
pp. 58-61 ◽  
Author(s):  
Maitreyee Saha ◽  
Atasi Pal ◽  
Ranjan Sen
Keyword(s):  
Rare Earth ◽  
Optical Fibers ◽  
Vapor Phase ◽  
High Power ◽  
High Power Laser ◽  
Power Laser

Photodegradation of Organic Compounds in the Vapor Phase Using TiO2-Coated Optical Fibers

1998 ◽  
Vol 3 (3) ◽  
Author(s):  
Anuncia González-Martín ◽  
Antony S. Jeevarajan ◽  
Oliver J. Murphy
Keyword(s):  
Organic Compounds ◽  
Organic Pollutants ◽  
Optical Fibers ◽  
Vapor Phase ◽  
Health Threat ◽  
Trace Contaminants

AbstractA variety of trace contaminants can accumulate in closed atmospheres, both in space and on earth, where they may pose a health threat to the human occupants. Complete photodegradation of organic pollutants with oxygen can be carried out on TiO

Planar defects in ordered (Ga,In)P

1988 ◽  
Vol 46 ◽  
pp. 902-903
Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy
Keyword(s):  
Electron Diffraction ◽  
Vapor Phase ◽  
Growth Direction ◽  
High Density ◽  
Ordered Structure ◽  
Planar Defects ◽  
Diffraction Patterns ◽  
Ternary Semiconductors ◽  
Anion Species ◽  
Metallic Vapor

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.

High-voltage monitoring by the fiber-optic recirculating measuring system

2020 ◽  
pp. 38-44
Author(s):  
A. V. Polyakov ◽  
M. A. Ksenofontov
Keyword(s):  
Optical Fibers ◽  
High Voltage ◽  
Optical Sensors ◽  
Electromagnetic Interference ◽  
Fiber Optic ◽  
Electric Power Industry ◽  
Measuring System ◽  
Voltage Range ◽  
External Electromagnetic Fields ◽  
Optic Communication

Optical technologies for measuring electrical quantities attract great attention due to their unique properties and significant advantages over other technologies used in high-voltage electric power industry: the use of optical fibers ensures high stability of measuring equipment to electromagnetic interference and galvanic isolation of high-voltage sensors; external electromagnetic fields do not influence the data transmitted from optical sensors via fiber-optic communication lines; problems associated with ground loops are eliminated, there are no side electromagnetic radiation and crosstalk between the channels. The structure and operation principle of a quasi-distributed fiber-optic high-voltage monitoring system is presented. The sensitive element is a combination of a piezo-ceramic tube with an optical fiber wound around it. The device uses reverse transverse piezoelectric effect. The measurement principle is based on recording the change in the recirculation frequency under the applied voltage influence. When the measuring sections are arranged in ascending order of the measured effective voltages relative to the receiving-transmitting unit, a relative resolution of 0,3–0,45 % is achieved for the PZT-5H and 0,8–1,2 % for the PZT-4 in the voltage range 20–150 kV.

191. Planar Waveguide Interferometers for Vapor Phase Sensing

1999 ◽  
Author(s):  
C. Joseph ◽  
D. Campbell ◽  
J. Suggs ◽  
J. Moore ◽  
N. Hartman
Keyword(s):  
Vapor Phase ◽  
Planar Waveguide
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