High-rate deposition of silicon thin film layers using linear plasma sources operated at very high excitation frequencies (80-140 MHz)

2012 ◽  
Author(s):  
B. Leszczynska ◽  
C. Strobel ◽  
S. Leszczynski ◽  
M. Albert ◽  
J. W. Bartha ◽  
...  
Keyword(s):  
Thin Film ◽  
High Rate ◽  
High Excitation ◽  
Silicon Thin Film ◽  
Plasma Sources ◽  
Excitation Frequencies ◽  
Very High ◽  
Linear Plasma

High-Rate Deposition of Intrinsic a-Si:H and μc-Si:H Layers for Thin‑Film Silicon Solar Cells using a Dynamic Deposition Process

2012 ◽  
Vol 1426 ◽  
pp. 27-32
Author(s):  
T. Zimmermann ◽  
A. J. Flikweert ◽  
T. Merdzhanova ◽  
J. Woerdenweber ◽  
A. Gordijn ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Chemical Vapor ◽  
Deposition Process ◽  
High Rate ◽  
Silicon Solar Cells ◽  
Plasma Sources ◽  
Thin Film Silicon ◽  
Very High ◽  
Linear Plasma

ABSTRACTThin‑film silicon solar cells based on hydrogenated amorphous silicon (a‑Si:H) and hydrogenated microcrystalline silicon (μc‑Si:H) absorber layers are typically deposited using static plasma-enhanced chemical vapor deposition (PECVD) processes. It has been found that the use of very‑high frequencies (VHF) is beneficial for the material quality at high deposition rates when compared to radio-frequency (RF) processes. In the present work a dynamic VHF‑PECVD technique using linear plasma sources is developed. The linear plasma sources facilitate the use of very-high excitation frequencies on large electrode areas without compromising on the homogeneity of the deposition process. It is shown that state-of-the-art a‑Si:H and μc‑Si:H single-junction solar cells can be deposited incorporating intrinsic layers grown dynamically by VHF-PECVD at 0.35 nm/s and 0.95 nm/s, respectively.

Lithium transport at silicon thin film: Barrier for high-rate capability anode

2010 ◽  
Vol 133 (3) ◽  
pp. 034701 ◽  
Author(s):  
Bo Peng ◽  
Fangyi Cheng ◽  
Zhanliang Tao ◽  
Jun Chen
Keyword(s):  
Thin Film ◽  
Rate Capability ◽  
High Rate ◽  
High Rate Capability ◽  
Silicon Thin Film ◽  
Lithium Transport

Improve silane utilization for silicon thin film deposition at high rate

2011 ◽  
Vol 520 (2) ◽  
pp. 694-696 ◽  
Author(s):  
Shengzhi Xu ◽  
Xiaodan Zhang ◽  
Yang Li ◽  
Shaozhen Xiong ◽  
Xinhua Geng ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
High Rate ◽  
Silicon Thin Film

High-Rate Deposited Amorphous Silicon Nitride for the Hydrogenated Amorphous Silicon Thin-Film Transistor Structures

1996 ◽  
Vol 424 ◽  
Author(s):  
Tong Li ◽  
Chun-Ying Chen ◽  
Charles T. Malone ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
High Rate ◽  
Electrical Performance ◽  
Silicon Thin Film ◽  
Amorphous Silicon Nitride ◽  
Hydrogenated Amorphous ◽  
Low Rate

AbstractHydrogenated amorphous silicon nitride thin films, prepared in a large area plasma-enhanced chemical vapor (PECVD) deposition system utilizing high-rate deposition technique, have been characterized by various techniques. Experimental data obtained from this study are presented and compared to low-rate deposited PECVD films. Special attention has been devoted during this study to the difference between high- and low-rate deposited samples. The amorphous silicon (a-Si:H) thin-film transistors (TFTs) based on high-rate PECVD materials have been fabricated and characterized. The evaluation of a-Si:H TFTs indicates a good electrical performance which is comparable to its low-rate PECVD materials counterparts.

Process monitoring of texture-etched high-rate ZnO:Al front contacts for silicon thin-film solar cells

2013 ◽  
Vol 532 ◽  
pp. 66-72 ◽  
Author(s):  
Gabrielle Jost ◽  
Tsvetelina Merdzhanova ◽  
Thomas Zimmermann ◽  
Jürgen Hüpkes
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Process Monitoring ◽  
Thin Film Solar Cells ◽  
High Rate ◽  
Silicon Thin Film
Sign in / Sign up

Export Citation Format

Share Document