scholarly journals Hydrostatic pressure and electric field effect on electronic states in double quantum rings

1899 ◽  
Author(s):  
H. M. Baghramyan ◽  
H. M. Baghramyan ◽  
M. G. Barseghyan ◽  
M. G. Barseghyan ◽  
C. A. Duque ◽  
...  
2012 ◽  
Vol 26 (26) ◽  
pp. 1250172 ◽  
Author(s):  
JUN ZHU ◽  
SHI LIANG BAN ◽  
SI HUA HA

The ground state binding energies of donor impurities in strained [0001]-oriented wurtzite GaN / Al x Ga 1-x N asymmetric double quantum wells are investigated using a variational method combined with numerical computation. The built-in electric field due to the spontaneous and strain-induced piezoelectric polarization and the strain modification on material parameters are taken into account. The variations of binding energies versus the width of central barrier, the ratio of two well widths, and the impurity position are presented, respectively. It is found that the built-in electric field causes a mutation of binding energies with increasing the width of central barrier to some value. The results for symmetrical double quantum wells and without the built-in electric field are also discussed for comparison.


2018 ◽  
Vol 32 (11) ◽  
pp. 1850138 ◽  
Author(s):  
Min Hu ◽  
Hailong Wang ◽  
Qian Gong ◽  
Shumin Wang

Within the framework of effective-mass envelope-function theory, the ground state binding energy of a hydrogenic donor impurity is calculated in the InGaAsP/InP concentric double quantum rings (CDQRs) using the plane wave method. The effects of geometry, impurity position, external electric field and alloy composition on binding energy are considered. It is shown that the peak value of the binding energy appears in two rings with large gap as the donor impurity moves along the radial direction. The binding energy reaches the peak value at the center of ring height when the donor impurity moves along the axial direction. The binding energy shows nonlinear variation with the increase of ring height. With the external electric field applied along the z-axis, the binding energy of the donor impurity located at z[Formula: see text] decreases while that located at z[Formula: see text] increases. In addition, the binding energy decreases with increasing Ga composition, but increases with the increasing As composition.


2021 ◽  
Vol 118 (16) ◽  
pp. 162110
Author(s):  
Yujie Quan ◽  
Sheng-Ying Yue ◽  
Bolin Liao

1974 ◽  
Vol 36 (1) ◽  
pp. 179-186 ◽  
Author(s):  
Yoshiro Sasaki ◽  
Chihiro Hamaguchi ◽  
Akihiro Morotani ◽  
Junkichi Nakai

Sign in / Sign up

Export Citation Format

Share Document