Lateral epitaxial overgrowth of ZnO films on a seed layer buffered MgAl2O4 substrate in water

2012 ◽  
Author(s):  
Y. B. Zhang ◽  
S. Li ◽  
G. K. L. Goh
Keyword(s):  
Seed Layer ◽  
Zno Films ◽  
Lateral Epitaxial Overgrowth

Seed-layer induced growth of high-quality oriented ZnO films by a sol–gel process

2006 ◽  
Vol 290 (1) ◽  
pp. 67-72 ◽  
Author(s):  
Can-Yun Zhang ◽  
Xiao-Min Li ◽  
Xia Zhang ◽  
Wei-Dong Yu ◽  
Jun-Liang Zhao
Keyword(s):  
Seed Layer ◽  
Sol Gel ◽  
Zno Films ◽  
High Quality ◽  
Sol Gel Process

scholarly journals Parametric study of seed-layer formation for low-temperature hydrothermal growth of highly oriented ZnO films on glass substrates (Phys. Status Solidi A 6/2013)

2013 ◽  
Vol 210 (6) ◽  
Author(s):  
Matejka Podlogar ◽  
Damjan Vengust ◽  
Jacob J. Richardson ◽  
Martin Strojnik ◽  
Matjaž Mazaj ◽  
...  
Keyword(s):  
Low Temperature ◽  
Parametric Study ◽  
Seed Layer ◽  
Hydrothermal Growth ◽  
Zno Films ◽  
Layer Formation ◽  
Glass Substrates

scholarly journals Seed Layer Assisted Hydrothermal Deposition of Low-resistivity ZnO Thin Films

MRS Advances ◽  
2017 ◽  
Vol 2 (14) ◽  
pp. 799-804 ◽  
Author(s):  
Eugene Chubenko ◽  
Vitaly Bondarenko ◽  
Amir Ghobadi ◽  
Gamze Ulusoy ◽  
Kağan Topalli ◽  
...  
Keyword(s):  
Seed Layer ◽  
Broad Band ◽  
Atomic Layer ◽  
Crystalline Lattice ◽  
Visible Range ◽  
Zno Films ◽  
Low Resistivity ◽  
Layer Deposition ◽  
Recombination Processes ◽  
20 Nm

ABSTRACTIn this work, we describe the combination of hydrothermal and atomic layer deposition (ALD) for growing low-resistivity ZnO polycrystalline continuous films. The effect of the thickness of ALD seed layers on the morphology of the hydrothermal ZnO films was studied. It was shown that ZnO films hydrothermally deposited on very thin seed layer consist of separate nanorods but in the case of 20 nm seed layer ZnO films transform to uniform continuous layers comprising of closely packed vertically aligned crystallites. Photoluminescence spectra were shown to exhibit broad band behavior in the visible range, corresponding to radiative recombination processes via oxygen defects of ZnO crystalline lattice, and narrow band in the UV region, associated with band-to-band recombination processes. It was shown that the resistivity of the obtained ZnO films is decreased gradually with the increase of ZnO films thickness and determined by the presence of crystal lattice defects in the seed layer.

scholarly journals Synthesis and Characterization of c-Axis Oriented Zinc Oxide Thin Film and Its Use for the Subsequent Hydrothermal Growth of Zinc Oxide Nanorods

MRS Advances ◽  
2019 ◽  
Vol 4 (16) ◽  
pp. 921-928
Author(s):  
S.F.U. Farhad ◽  
N.I. Tanvir ◽  
M.S. Bashar ◽  
M. Sultana
Keyword(s):  
Zinc Oxide ◽  
Band Gap ◽  
Seed Layer ◽  
Optical Band Gap ◽  
Zno Nanorods ◽  
Zinc Oxide Nanorods ◽  
Oxide Thin Film ◽  
Yellow Emission ◽  
Zno Films ◽  
Seed Layers

ABSTRACTOriented ZnO seed layers were deposited by three different techniques, namely, simple drop casting (DC), sol-gel derived dip coating (DPC) and spin coating of ball-milled ZnO powder solution(BMD) for the subsequent growth of vertically aligned ZnO nanorods along the substrate normal. X-ray diffraction (XRD) analyses revealed that ZnO(DC) seed layer exhibit the highest preferential c-axis texturing among the ZnO seed layers synthesized by different techniques. The Scanning Electron Microscopy (SEM) analysis evident that the morphology of ZnO seed layer surface is compact and coherently carpets the underlying substrate. ZnO nanorods(NRs) were then grown by hydrothermal method atop the ZnO seeded and non-seeded substrates grown by different techniques to elucidate the best ZnO seed layer promoting well-aligned ZnO Nanorods. The presence of c-axis oriented ZnO(DC) seeding layers was found to significantly affect the surface morphology and crystallographic orientation of the resultant ZnO NRs films. The optical band gap of ZnO(DC) seed and ZnO NRs were estimated to be 3.30 eV and in the range of 3.18 – 3.25 eV respectively by using UV-VIS-NIR diffuse reflection spectroscopy. The room temperature photoluminescence analyses revealed that nanostructured ZnO films exhibit a sharp near-band-edge luminescence peak at ∼380 nm consistent with the estimated optical band gap and the ZnO nanorod arrays are notably free from defect-related green-yellow emission peaks.

Parametric study of seed-layer formation for low-temperature hydrothermal growth of highly oriented ZnO films on glass substrates

2013 ◽  
Vol 210 (6) ◽  
pp. 1083-1092 ◽  
Author(s):  
Matejka Podlogar ◽  
Damjan Vengust ◽  
Jacob J. Richardson ◽  
Martin Strojnik ◽  
Matjaž Mazaj ◽  
...  
Keyword(s):  
Low Temperature ◽  
Parametric Study ◽  
Seed Layer ◽  
Hydrothermal Growth ◽  
Zno Films ◽  
Layer Formation ◽  
Glass Substrates
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