Electron-beam proximity effect model calibration for fabricating scatterometry calibration samples

Author(s):  
Yu-Tian Shen ◽  
Chun-Hung Liu ◽  
Chih-Yu Chen ◽  
Hoi-Tou Ng ◽  
Kuen-Yu Tsai ◽  
...  
2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama

2018 ◽  
Vol 232 ◽  
pp. 04046
Author(s):  
Yuhang Chen ◽  
Zhipeng Huang ◽  
Xiongfeng Chen ◽  
Jianli Chen ◽  
Wenxing Zhu

Proximity effect is one of the most tremendous consequences that produces unacceptable exposures during electron beam lithography (EBL), and thus distorting the layout pattern. In this paper, we propose the first work which considers the proximity effect during layout stage. We first give an accurate evaluation scheme to estimate the proximity effect by fast Gauss transform. Then, we devote a proximity effect aware detailed placement objective function to simultaneously consider wirelength, density and proximity effect. Furthermore, cell swapping and cell matching based methods are used to optimize the objective function such that there is no overlap among cells. Compared with a state-of-the-art work, experimental result shows that our algorithm can efficiently reduce the proximity variations and maintain high wirelength quality at a reasonable runtime.


2001 ◽  
Vol 90 (1) ◽  
pp. 355-364 ◽  
Author(s):  
G. Brammertz ◽  
A. Poelaert ◽  
A. A. Golubov ◽  
P. Verhoeve ◽  
A. Peacock ◽  
...  

1997 ◽  
Vol 36 (Part 1, No. 12B) ◽  
pp. 7546-7551 ◽  
Author(s):  
Takashi Kamikubo ◽  
Takayuki Abe ◽  
Susumu Oogi ◽  
Hiroto Anze ◽  
Mitsuko Shimizu ◽  
...  

2010 ◽  
Author(s):  
Chun-Hung Liu ◽  
Pei-Lin Tien ◽  
Philip C. W. Ng ◽  
Yu-Tian Shen ◽  
Kuen-Yu Tsai

Sign in / Sign up

Export Citation Format

Share Document