Low-voltage, high-extinction ratio carrier-depletion Mach-Zehnder silicon optical modulator

2011 ◽  
Author(s):  
Jianfeng Ding ◽  
Hongtao Chen ◽  
Ruiqiang Ji ◽  
Lin Yang ◽  
Yonghui Tian ◽  
...  
2012 ◽  
Vol 20 (3) ◽  
pp. 3209 ◽  
Author(s):  
Jianfeng Ding ◽  
Hongtao Chen ◽  
Lin Yang ◽  
Lei Zhang ◽  
Ruiqiang Ji ◽  
...  

Author(s):  
Ding Jianfeng ◽  
Chen Hongtao ◽  
Ji Ruiqiang ◽  
Yang Lin ◽  
Tian Yonghui ◽  
...  

2022 ◽  
Author(s):  
Zhaobang Zeng ◽  
Lemeng Leng ◽  
Peiyan Zhao ◽  
Chenbin Zhang ◽  
Ding Ding ◽  
...  

Author(s):  
Swati Rajput ◽  
Prem Babu ◽  
Vishal Kaushik ◽  
Lalit Singh ◽  
Sourabh Jain ◽  
...  

2010 ◽  
Vol 35 (24) ◽  
pp. 4160 ◽  
Author(s):  
Atsushi Kanno ◽  
Shinnosuke Honda ◽  
Ryuta Yamanaka ◽  
Hideyuki Sotobayashi ◽  
Tetsuya Kawanishi

2019 ◽  
Vol 9 (18) ◽  
pp. 3846
Author(s):  
Worawat Traiwattanapong ◽  
Kazumi Wada ◽  
Papichaya Chaisakul

We report on the theoretical investigation of using an amorphous Ge0.83Si0.17 lateral taper to enable a low-loss small-footprint optical coupling between a Si3N4 waveguide and a low-voltage Ge-based Franz–Keldysh optical modulator on a bulk Si substrate using 3D Finite-Difference Time-Domain (3D-FDTD) simulation at the optical wavelength of 1550 nm. Despite a large refractive index and optical mode size mismatch between Si3N4 and the Ge-based modulator, the coupling structure rendered a good coupling performance within fabrication tolerance of advanced complementary metal-oxide semiconductor (CMOS) processes. For integrated optical modulator performance, the Si3N4-waveguide-integrated Ge-based on Si optical modulators could simultaneously provide workable values of extinction ratio (ER) and insertion loss (IL) for optical interconnect applications with a compact footprint.


2011 ◽  
Vol 19 (7) ◽  
pp. 5827 ◽  
Author(s):  
Gilles Rasigade ◽  
Melissa Ziebell ◽  
Delphine Marris-Morini ◽  
Jean-Marc Fédéli ◽  
Frédéric Milesi ◽  
...  

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