Physics of failure investigation in high-power broad-area InGaAs-AlGaAs strained quantum well lasers

2012 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen D. LaLumondiere ◽  
Nathan Presser ◽  
Brendan J. Foran ◽  
Neil A. Ives ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Broad Area ◽  
Physics Of Failure ◽  
Failure Investigation ◽  
Strained Quantum Well

A Study of Degradation in High Power Multi-Mode InGaAs-AlGaAs Strained Quantum Well Lasers as Pump Lasers

2009 ◽  
Vol 1195 ◽  
Author(s):  
Yongkun Sin ◽  
Nathan Presser ◽  
Neil Ives ◽  
Steven C. Moss
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Deep Level ◽  
Quantum Well Lasers ◽  
Broad Area ◽  
Dark Line ◽  
Time Resolved ◽  
Transient Spectroscopy ◽  
Strained Quantum Well ◽  
Broad Area Lasers

AbstractDegradation processes in high power broad-area InGaAs-AlGaAs strained quantum well lasers were studied using electron beam-induced current (EBIC) techniques, time-resolved electroluminescence (TR-EL) techniques, and deep-level transient spectroscopy (DLTS). Accelerated lifetests of the broad-area lasers yielded catastrophic failures at the front facet and also in the bulk. EBIC was employed to study dark line defects generated in degraded lasers stressed under different test conditions. TR-EL was employed to study the intra-cavity intensity distribution in real time as devices were aged. DLTS was employed to study deep electron traps in both pristine and degraded laser diodes. Lastly, we present a possible scenario for the initiation of bulk degradation in the broad-area lasers.

High-power broad-area InGaNAs/GaAs quantum-well lasers in the 1200nm range

2010 ◽  
Vol 50 (5) ◽  
pp. 722-725 ◽  
Author(s):  
Hung-Pin D. Yang ◽  
Chih-Tsung Shih ◽  
Su-Mei Yang ◽  
Tsin-Dong Lee
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Quantum Well Lasers ◽  
Broad Area
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