scholarly journals Design of low-noise output amplifiers for P-channel charge-coupled devices fabricated on high-resistivity silicon

Author(s):  
S. Haque ◽  
F. Dion ◽  
R. Frost ◽  
R. Groulx ◽  
S. E. Holland ◽  
...  
2003 ◽  
Vol 50 (1) ◽  
pp. 225-238 ◽  
Author(s):  
S.E. Holland ◽  
D.E. Groom ◽  
N.P. Palaio ◽  
R.J. Stover ◽  
Mingzhi Wei

1993 ◽  
Vol 302 ◽  
Author(s):  
G. Bertuccio ◽  
A. Pullia

ABSTRACTThe design and performances of a system for high resolution X-ray spectroscopy are presented. The detector is a low capacitance diode built on high resistivity silicon. The signal preamplification is made by means of an ultra-low noise charge amplifier of new conception. Presently the system exhibits an equivalent noise charge of 61 r.m.s. electrons at 297 K and 32 r.m.s. electrons at 223 K. It is shown how an improvement down to 30 r.m.s. electrons at room temperature is expected employing an integrated transistor on the detector chip.


1988 ◽  
Vol 49 (C4) ◽  
pp. C4-363-C4-366 ◽  
Author(s):  
V. RADEKA ◽  
P. REHAK ◽  
S. RESCIA ◽  
E. GATTI ◽  
A. LONGONI ◽  
...  

2010 ◽  
Vol 58 (3) ◽  
pp. 706-713 ◽  
Author(s):  
Woosung Lee ◽  
Jaeheung Kim ◽  
Choon Sik Cho ◽  
Young Joong Yoon

Author(s):  
L. Pancheri ◽  
D. Stoppa ◽  
N. Massari ◽  
M. Malfatti ◽  
C. Piemonte ◽  
...  

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