Investigation of the use of rotating linearly polarized light for characterizing SiO2 thin film on Si substrate

2011 ◽  
Author(s):  
C. Pawong ◽  
R. Chitaree ◽  
C. Soankwan
Keyword(s):  
Thin Film ◽  
Polarized Light ◽  
Si Substrate ◽  
Sio2 Thin Film ◽  
Linearly Polarized

Physical Behavior of Fluorine Atoms in the Fabricated Transparent SiO2 Thin Film at Room Temperature

1998 ◽  
Vol 555 ◽  
Author(s):  
H lizuka ◽  
M Murahara
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Photochemical Reaction ◽  
Oxidation Reaction ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Reaction Chamber ◽  
Si Substrate ◽  
Physical Behavior ◽  
Sio2 Thin Film

AbstractThis paper describe the growth of a transparent SiO2 thin film performed by using Xe2• excimer lamp at room temperature. In this study, NF., and O2 mixture gases was employed as a reaction gas. A silicon substrate was placed in a reaction chamber, which was filled with NF3 and O2 mixture gases. The mixture gases were exposed to the Xe2• excimer lamplight, and SiF4 and NO2 gases were produced by photochemical reaction. Subsequently SiF4 adsorbed onto the Si substrate. SiO2 was formed by oxidation reaction between SiF4 and NO2. These processes occur spontaneously, and SiO2 film is grown. The refractive index of fabrication SiO2 thin film is 1.32. By annealing at 200°C, the refractive index of this filn was increased to 1.44. Further increase in the annealing temperature, resulted in a higher refractive index and lower density of fluorine atoms.

Electronic characterization of Si/SiO2 structure using photo-CVD SiO2 thin film on atomically flat Si substrate

1998 ◽  
Vol 130-132 ◽  
pp. 214-220 ◽  
Author(s):  
Osamu Maida ◽  
Hideaki Yamamoto ◽  
Norio Okada ◽  
Takeshi Kanashima ◽  
Masanori Okuyama
Keyword(s):  
Thin Film ◽  
Si Substrate ◽  
Sio2 Thin Film ◽  
Atomically Flat

Real Time Characterization of Non-Ideal Surfaces and Thin Film Growth by Advanced Ellipsometric Spectroscopies

1999 ◽  
Vol 569 ◽  
Author(s):  
R. W. Collins ◽  
P. I. Rovira ◽  
A. S. Ferlauto ◽  
Joohyun Koh ◽  
Ilsin An ◽  
...  
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Film Growth ◽  
Polarization State ◽  
Polarized Light ◽  
Film Surface ◽  
Thin Film Growth ◽  
Inhomogeneous Materials ◽  
Linearly Polarized ◽  
Silicon Based

ABSTRACTThe development of multichannel ellipsometers with photodiode array-based detection systems has enabled real time spectroscopic ellipsometry (SE), a technique now being used widely to study surface modification and thin film growth. Multichannel ellipsometers based on the rotating-element design acquire spectroscopic data in parallel and thus offer advantages over other designs. The simplest rotating-element multichannel ellipsometers are constructed using a rotating polarizer or analyzer for polarization state modulation or detection. These configurations have a number of drawbacks, in particular, their insensitivity when measuring samples that reflect linearly polarized light and their susceptibility to errors when measuring samples having unrecognized non-idealities (e.g., macroscopic inhomogeneities) that generate a mixture of polarization states in the reflected beam. In this review, we describe recent advances in multichannel ellipsometry including (i) enhancement of the spectral range of the rotating-polarizer multichannel ellipsometer to 1.5–6.5 eV, (ii) adaptation of the rotating-compensator configuration to multichannel ellipsometry for studies of weakly absorbing and macroscopically inhomogeneous materials, and (iii) development of a dual rotating-compensator multichannel ellipsometer design for real time studies of optically anisotropic materials. As a recent example of the application of rotating-compensator multichannel ellipsometry, we describe analyses of (i) a macroscopically-rough (textured) tin-oxide (Sno2) film on a glass substrate and (ii) the fabrication of the p-layer component of an amorphous silicon-based p-i-n solar cell on the textured SnO2 film surface at a temperature of 200°C.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

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