Photoinduced effect in Te-As-Se thin films for photonic applications

2010 ◽  
Author(s):  
R. Chauhan ◽  
A. K. Srivastava ◽  
A. Tripathi ◽  
M. Mishra ◽  
K. K. Srivastava
Keyword(s):  
Thin Films ◽  
Photoinduced Effect

scholarly journals Photoinduced effect in Cu doping La0.67Sr0.33Cux Mn1-xO3 thin films

2009 ◽  
Vol 58 (7) ◽  
pp. 4953
Author(s):  
Jin Ke-Xin ◽  
Zhao Sheng-Gui ◽  
Chen Chang-Le
Keyword(s):  
Thin Films ◽  
Cu Doping ◽  
Photoinduced Effect

Relaxation of photoinduced effect on surface spin‐wave modes in H+2‐implanted YIG thin films (abstract)

1987 ◽  
Vol 61 (8) ◽  
pp. 4296-4296
Author(s):  
K. Uematsu ◽  
A. Sakurai ◽  
J. S. Shin ◽  
T. Tsuchiya
Keyword(s):  
Thin Films ◽  
Spin Wave ◽  
Surface Spin ◽  
Photoinduced Effect ◽  
Wave Modes

Photoinduced Effect on Surface Modes in H2+-Implanted YIG Thin Films

1987 ◽  
Vol 2 (3) ◽  
pp. 275-276
Author(s):  
A. Sakurai ◽  
T. Tsuchiya ◽  
K. Uematsu
Keyword(s):  
Thin Films ◽  
Surface Modes ◽  
Photoinduced Effect

Photoinduced effect on the phase transition in Ag3VO4 thin films

1987 ◽  
Vol 149 (3) ◽  
pp. L85-L88 ◽  
Author(s):  
Takushi Hirono ◽  
Hideo Koizumi ◽  
Tomoaki Yamada ◽  
Toshihiro Nishi
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Photoinduced Effect

Photoinduced effect in Ga–Ge–S based thin films

2006 ◽  
Vol 252 (24) ◽  
pp. 8738-8744 ◽  
Author(s):  
S.H. Messaddeq ◽  
M. Siu Li ◽  
S. Inoue ◽  
S.J.L. Ribeiro ◽  
Y. Messaddeq
Keyword(s):  
Thin Films ◽  
Photoinduced Effect

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

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