Direct graphene growth on MgO(111) by physical vapor deposition: interfacial chemistry and band gap formation

2011 ◽  
Author(s):  
J. A. Kelber ◽  
S. Gaddam ◽  
C. Vamala ◽  
S. Eswaran ◽  
P. A. Dowben
Keyword(s):  
Band Gap ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Gap Formation ◽  
Interfacial Chemistry ◽  
Graphene Growth

Direct Graphene Growth on Oxides: Interfacial Interactions and Band Gap Formation

2012 ◽  
Vol 45 (4) ◽  
pp. 49-61 ◽  
Author(s):  
J. A. Kelber ◽  
M. Zhou ◽  
S. Gaddam ◽  
F. L. Pasquale ◽  
L. M. Kong ◽  
...  
Keyword(s):  
Band Gap ◽  
Gap Formation ◽  
Interfacial Interactions ◽  
Graphene Growth

scholarly journals Optical Properties of Wide Band Gap Indium Sulphide Thin Films Obtained by Physical Vapor Deposition

2001 ◽  
Vol 184 (1) ◽  
pp. 179-186 ◽  
Author(s):  
N. Barreau ◽  
S. Marsillac ◽  
J.C. Bern�de ◽  
T. Ben Nasrallah ◽  
S. Belgacem
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Wide Band ◽  
Wide Band Gap ◽  
Indium Sulphide

Facile synthesis of novel antimony selenide nanocrystals with hierarchical architecture by physical vapor deposition technique

2019 ◽  
Vol 52 (2) ◽  
pp. 312-321 ◽  
Author(s):  
J. Bibin ◽  
A. G. Kunjomana
Keyword(s):  
Electron Microscopy ◽  
Band Gap ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Quartz Ampoule ◽  
Deposition Method ◽  
X Ray ◽  
Physical Vapor Deposition Method ◽  
Vapor Deposition Technique ◽  
Antimony Selenide

Stoichiometric antimony selenide (Sb2Se3) nanocrystals have been successfully engineered by a facile physical vapor deposition method, employing a single precursor of polycrystalline Sb2Se3 charge in a closed quartz ampoule under high vacuum without any foreign seed or extraneous chemical elements. This work underscores the efficacy of the vapor deposition process and provides synthetic strategies to scale down bulk Sb2Se3 into novel nanostructures. The morphological evolution of the tailored architecture was examined on micro and nano size scales by scanning electron microscopy and high-resolution transmission electron microscopy. The intrinsic mechanism governing the nanostructure formation is revealed as layer-by-layer growth, related to the unique layered structure of Sb2Se3. The optical properties of the grown crystals were probed by UV–vis–NIR and photoluminescence tools. The band-gap values of the microfibers, nanorods, nanooctahedra and nanospheres estimated from UV–vis–NIR analysis are found to be 1.25, 1.47, 1.51 and 1.75 eV, respectively. Powder X-ray diffraction, energy-dispersive analysis by X-rays, X-ray photoelectron spectroscopy, Raman spectroscopy and photoluminescence studies confirmed the quality, phase purity and homogeneity of the as-grown nanostructures. The adopted physical vapor deposition method is thus shown to be a simple and elegant route which resulted in the enhancement of the band gap for the Sb2Se3 samples compared with their counterparts grown by chemical methods. This approach has great potential for further applications in optoelectronics.

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band
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